IRF9Z30 datasheet, PDF - EEWORLD Datasheet

IRF9Z30: DescriptionP-CHANNEL 50 VOLT POWER MOSFETS; CategoryDiscrete semiconductor The transistor; File Size425KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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P-CHANNEL 50 VOLT POWER MOSFETS

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (Abs) (ID)	18 A
Maximum drain current (ID)	18 A
Maximum drain-source on-resistance	0.14 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	74 W
Maximum pulsed drain current (IDM)	60 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
Transistor component materials	SILICON
Base Number Matches	1

	IRF9Z30	IRF9Z32
Description	P-CHANNEL 50 VOLT POWER MOSFETS	P-CHANNEL 50 VOLT POWER MOSFETS
Is it Rohs certified?	incompatible	incompatible
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
Reach Compliance Code	compliant	unknown
ECCN code	EAR99	EAR99
Shell connection	DRAIN	DRAIN
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	50 V	50 V
Maximum drain current (Abs) (ID)	18 A	15 A
Maximum drain current (ID)	18 A	15 A
Maximum drain-source on-resistance	0.14 Ω	0.21 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	225	225
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	74 W	74 W
Maximum pulsed drain current (IDM)	60 A	50 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	30
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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