H5N2801P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0118-0100Z
Rev.1.00
Oct.01.2003
Features
•
Low on-resistance
•
Low drive current
•
High speed switching
Outline
TO-3P
D
G
1
S
2
3
1. Gate
2. Drain (Flange)
3. Source
Rev.1.00, Oct.01.2003, page 1 of 9
H5N2801P
Absolute Maximum Rating
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain
current
Avalanche current
Avalanche energy
Channel dissipation
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
APNote3
E
AR
Note3
Rating
280
±30
60
240
60
35
74.5
150
0.833
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
/W
°C
°C
Pch
Note2
Channel to case thermal impedance
θch-c
Channel temperature
Storage temperature
Tch
Tstg
Notes: 1. PW
≤
10
µs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Rev.1.00, Oct.01.2003, page 2 of 9
H5N2801P
Electrical Characteristics
(Ta = 25°C)
Item
Drain to Source breakdown
voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Symbol Min
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
|yfs|
R
DS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
V
DF
280
—
—
3.0
27
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
45
0.034
5400
770
100
70
300
250
210
148
30
73
1.10
270
2.8
Max
—
1
±0.1
4.5
—
0.043
—
—
—
—
—
—
—
—
—
—
1.65
—
—
Unit
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
µC
I
F
= 60 A, V
GS
= 0
Note4
I
F
= 60 A, V
GS
= 0
diF/dt = 100 A/µs
V
DD
= 220 V
V
GS
= 10 V
I
D
= 60 A
I
D
= 30 A
R
L
= 4.7
Ω
V
GS
= 10 V
Rg = 10
Ω
Test condition
I
D
= 10 mA, V
GS
= 0
V
DS
= 280 V, V
GS
= 0
V
GS
= ±30 V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 30 A, V
DS
= 10 V
Note4
I
D
= 30 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Body-drain diode reverse recovery trr
time
Body-drain diode reverse recovery Qrr
charge
Notes: 4. Pulse test
Rev.1.00, Oct.01.2003, page 3 of 9
H5N2801P
Main Characteristics
Power vs. Temperature Derating
200
Maximum Safe Operation Area
1000
300
Pch (W)
I
D
(A)
150
100
30
10
3
DC
Op
PW
er
at
=
Channel Dissipation
Drain Current
10
(T
1m
m
10
0
s
10
µ
s
µ
s
100
ion
s(
1s
°
C
c=
ho
t)
50
Operation in
1
this area is
limited by R
DS(on)
25
)
0.3
0.1
0
50
100
150
Tc (°C)
200
1
Case Temperature
Ta = 25°C
30
3
10
100 300 1000
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
10 V
8V
7V
200
6.5 V
Pulse Test
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
I
D
(A)
60
I
D
(A)
Drain Current
6V
5.5 V
80
160
120
Drain Current
40
80
Tc = 75°C
25°C
–25°C
0
2
4
6
Gate to Source Voltage
8
10
V
GS
(V)
20
V
GS
= 5 V
0
4
8
12
Drain to Source Voltage
16
20
V
DS
(V)
40
Rev.1.00, Oct.01.2003, page 4 of 9
H5N2801P
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Pulse Test
4
3
I
D
= 60 A
2
30 A
10 A
0
12
4
8
Gate to Source Voltage
16
20
V
GS
(V)
1
Drain to Source on State Resistance
R
DS(on)
(Ω)
5
Static Drain to Source on State Resistance
vs. Drain Current
0.2
Pulse Test
V
GS
= 10 V,15 V
0.1
0.05
0.02
0.01
1
2
5
10 20
50
Drain Current I
D
(A)
100
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
vs. Temperature
0.1
Pulse Test
0.08
V
GS
= 10 V
I
D
= 60 A
Forward Transfer Admittance vs.
Drain Current
100
50
Tc = –25°C
20
10
5
75°C
2
1
0.5
0.2
0.2
0.5 1
2
5
V
DS
= 10 V
Pulse Test
10 20
I
D
(A)
50 100
25°C
0.06
10 A
0.04
30 A
0.02
0
–40
0
40
80
120
Case Temperature Tc (°C)
160
Drain Current
Rev.1.00, Oct.01.2003, page 5 of 9
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