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HVL381C

Description
10.5 pF, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size143KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

HVL381C Overview

10.5 pF, SILICON, VARIABLE CAPACITANCE DIODE

HVL381C Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
package instructionEFP, 2 PIN
Contacts2
Manufacturer packaging codeEFP
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode Capacitance Tolerance2.86%
Minimum diode capacitance ratio1.65
Nominal diode capacitance10.5 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
HVL381C
Variable Capacitance Diode for VCO
REJ03G0224-0200
Rev.2.00
Mar 14, 2006
Features
High capacitance ratio. (n = 1.65 min)
Low series resistance. (rs = 0.50
max)
Extremely small Flat Lead Package (EFP) is suitable for surface mount design.
Ordering Information
Type No.
HVL381C
Laser Mark
R
Package Name
EFP
Package Code
PXSF0002ZA-A
Pin Arrangement
Cathode mark
Mark
1
R
2
1. Cathode
2. Anode
Rev.2.00 Mar 14, 2006 page 1 of 4

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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