Standard SRAM, 8KX9, 45ns, CMOS, PDIP28
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Parts packaging code | DIP |
package instruction | DIP, DIP28,.3 |
Contacts | 28 |
Reach Compliance Code | unknown |
Maximum access time | 45 ns |
I/O type | COMMON |
JESD-30 code | R-PDIP-T28 |
JESD-609 code | e0 |
memory density | 73728 bit |
Memory IC Type | STANDARD SRAM |
memory width | 9 |
Number of terminals | 28 |
word count | 8192 words |
character code | 8000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 8KX9 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.3 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
power supply | 5 V |
Certification status | Not Qualified |
Maximum standby current | 0.015 A |
Minimum standby current | 4.5 V |
Maximum slew rate | 0.13 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Base Number Matches | 1 |
MB81C79B-45P-SK | MB81C79B-35P-SK | MB81C79-45C | MB81C79A-45WC | MB81C79-55C | MB81C79A-35P-SK | MB81C79A-45P-SK | |
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Description | Standard SRAM, 8KX9, 45ns, CMOS, PDIP28 | Standard SRAM, 8KX9, 35ns, CMOS, PDIP28 | IC,SRAM,8KX9,CMOS,DIP,28PIN,CERAMIC | IC,SRAM,8KX9,CMOS,DIP,28PIN,CERAMIC | IC,SRAM,8KX9,CMOS,DIP,28PIN,CERAMIC | IC,SRAM,8KX9,CMOS,DIP,28PIN,PLASTIC | IC,SRAM,8KX9,CMOS,DIP,28PIN,PLASTIC |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
package instruction | DIP, DIP28,.3 | DIP, DIP28,.3 | DIP, DIP28,.6 | DIP, DIP28,.3 | DIP, DIP28,.6 | DIP, DIP28,.3 | DIP, DIP28,.3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
Maximum access time | 45 ns | 35 ns | 45 ns | 45 ns | 55 ns | 35 ns | 45 ns |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-PDIP-T28 | R-PDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-XDIP-T28 | R-PDIP-T28 | R-PDIP-T28 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
memory density | 73728 bit | 73728 bit | 73728 bit | 73728 bit | 73728 bit | 73728 bit | 73728 bit |
Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
memory width | 9 | 9 | 9 | 9 | 9 | 9 | 9 |
Number of terminals | 28 | 28 | 28 | 28 | 28 | 28 | 28 |
word count | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
character code | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 | 8000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 125 °C | 70 °C | 70 °C | 70 °C |
organize | 8KX9 | 8KX9 | 8KX9 | 8KX9 | 8KX9 | 8KX9 | 8KX9 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | CERAMIC | CERAMIC | CERAMIC | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
Encapsulate equivalent code | DIP28,.3 | DIP28,.3 | DIP28,.6 | DIP28,.3 | DIP28,.6 | DIP28,.3 | DIP28,.3 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum standby current | 0.015 A | 0.015 A | 0.015 A | 0.02 A | 0.015 A | 0.015 A | 0.015 A |
Maximum slew rate | 0.13 mA | 0.13 mA | 0.12 mA | 0.12 mA | 0.12 mA | 0.09 mA | 0.09 mA |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | NO | NO | NO | NO | NO | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | MILITARY | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Minimum standby current | 4.5 V | 4.5 V | - | 4.5 V | - | 4.5 V | 4.5 V |
Objectid | - | - | 1167350506 | 1167350511 | 1167350509 | 101249611 | 101249621 |
ECCN code | - | - | EAR99 | 3A001.A.2.C | EAR99 | EAR99 | EAR99 |