2SK2735S datasheet, PDF - EEWORLD Datasheet

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2SK2735S: DescriptionSilicon N Channel MOS FET High Speed Power Switching; CategoryDiscrete semiconductor The transistor; File Size81KB，8 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2SK2735S Overview

Silicon N Channel MOS FET High Speed Power Switching

2SK2735S Parametric

Parameter Name	Attribute value
package instruction	DPAK-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	20 A
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	20 W
Maximum pulsed drain current (IDM)	80 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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2SK2735(L), 2SK2735(S)

Silicon N Channel MOS FET

High Speed Power Switching

REJ03G1029-0200

(Previous: ADE-208-543)

Rev.2.00

Sep 07, 2005

Features

•

Low on-resistance

= 20 mΩ typ.

•

High speed switching

•

4 V gate drive device can be driven from 5 V source

Outline

RENESAS Package code: PRSS0004ZD-B

(Package name: DPAK(L)-(2))

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK(S))

1. Gate

2. Drain

3. Source

4. Drain

2 3

Rev.2.00 Sep 07, 2005 page 1 of 7

2SK2735S Related Products

	2SK2735S	2SK2735	2SK2735L	2SK2735L-E
Description	Silicon N Channel MOS FET High Speed Power Switching	Silicon N Channel MOS FET High Speed Power Switching	Silicon N Channel MOS FET High Speed Power Switching	Silicon N Channel MOS FET High Speed Power Switching
package instruction	DPAK-3	-	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	-	3	4
Reach Compliance Code	compli	-	compli	compli
ECCN code	EAR99	-	EAR99	EAR99
Shell connection	DRAIN	-	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	-	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	-	30 V	30 V
Maximum drain current (Abs) (ID)	20 A	-	20 A	20 A
Maximum drain current (ID)	20 A	-	20 A	20 A
Maximum drain-source on-resistance	0.05 Ω	-	0.05 Ω	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	-	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	-	R-PSIP-T3	R-PSIP-T3
Number of components	1	-	1	1
Number of terminals	2	-	3	3
Operating mode	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	-	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	IN-LINE	IN-LINE
Polarity/channel type	N-CHANNEL	-	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	20 W	-	20 W	20 W
Maximum pulsed drain current (IDM)	80 A	-	80 A	80 A
Certification status	Not Qualified	-	Not Qualified	Not Qualified
surface mount	YES	-	NO	NO
Terminal form	GULL WING	-	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE	SINGLE
transistor applications	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON
Base Number Matches	1	-	1	1

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