Important notice
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DISCRETE SEMICONDUCTORS
DATA SHEET
BCW31; BCW32; BCW33
NPN general purpose transistors
Product data sheet
Supersedes data of 2000 Jul 04
2004 Feb 06
NXP Semiconductors
Product data sheet
NPN general purpose transistors
FEATURES
•
Low current (100 mA)
•
Low voltage (32 V).
APPLICATIONS
•
General purpose switching and amplification.
DESCRIPTION
NPN transistors in a plastic SOT23 package.
PNP complements: BCW29 and BCW30.
MARKING
TYPE NUMBER
BCW31
BCW32
BCW33
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BCW31
BCW32
BCW33
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
2004 Feb 06
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
2
T
amb
≤
25
°C
CONDITIONS
open emitter
open base; I
C
= 2 mA
open collector
−
−
−
−
−
−
−
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
D1*
D2*
D3*
Top view
handbook, halfpage
BCW31; BCW32;
BCW33
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
1
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
MIN.
MAX.
32
32
5
100
200
200
250
+150
150
+150
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
−65
−
−65
NXP Semiconductors
Product data sheet
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
BCW31
BCW32
BCW33
DC current gain
BCW31
BCW32
BCW33
V
CEsat
V
BEsat
V
BE
C
c
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 50 mA; I
B
= 2.5 mA
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 50 mA; I
B
= 2.5 mA
I
C
= 2 mA; V
CE
= 5 V
I
C
= 2 mA; V
CE
= 5 V
CONDITIONS
I
E
= 0; V
CB
= 32 V
PARAMETER
thermal resistance from junction to ambient
BCW31; BCW32; BCW33
CONDITIONS
note 1
VALUE
500
UNIT
K/W
MIN.
−
−
−
−
−
−
110
200
420
−
−
−
−
550
−
100
−
TYP.
−
−
−
190
330
600
−
−
−
120
210
750
850
−
2.5
−
−
MAX.
100
10
100
−
−
−
220
450
800
250
−
−
−
700
−
−
10
UNIT
nA
μA
nA
I
E
= 0; V
CB
= 32 V; T
j
= 100
°C
I
C
= 0; V
EB
= 5 V
I
C
= 10
μA;
V
CE
= 5 V
mV
mV
mV
mV
mV
pF
MHz
dB
I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 5 V;
f = 100 MHz
I
C
= 200
μA;
V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz; B = 200 Hz
2004 Feb 06
3
NXP Semiconductors
Product data sheet
NPN general purpose transistors
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BCW31; BCW32; BCW33
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Feb 06
4
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