FSPJ160R3 datasheet, PDF - EEWORLD Datasheet

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FSPJ160R3: DescriptionPower Field-Effect Transistor, 70A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA; CategoryDiscrete semiconductor The transistor; File Size107KB，7 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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FSPJ160R3 Overview

Power Field-Effect Transistor, 70A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

FSPJ160R3 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	70 A
Maximum drain-source on-resistance	0.011 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	PIN/PEG
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

FSPJ160R3 Related Products

	FSPJ160R3	FSPJ160R4	FSPJ160D1
Description	Power Field-Effect Transistor, 70A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	Power Field-Effect Transistor, 70A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	Power Field-Effect Transistor, 70A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Is it lead-free?	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible
package instruction	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V
Maximum drain current (ID)	70 A	70 A	70 A
Maximum drain-source on-resistance	0.011 Ω	0.011 Ω	0.011 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA	TO-254AA	TO-254AA
JESD-30 code	S-MSFM-P3	S-MSFM-P3	S-MSFM-P3
JESD-609 code	e0	e0	e0
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	235	NOT SPECIFIED	235
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A	200 A	200 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED	30
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	-
Maker	-	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）

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