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2SA673CTZ-E

Description
Silicon PNP Epitaxial
CategoryDiscrete semiconductor    The transistor   
File Size51KB,5 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SA673CTZ-E Overview

Silicon PNP Epitaxial

2SA673CTZ-E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-92
package instructionLEAD FREE, SC-43A, TO-92(1), 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage35 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.4 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

2SA673CTZ-E Related Products

2SA673CTZ-E 2SA673 2SA673A 2SA673BTZ-E
Description Silicon PNP Epitaxial Silicon PNP Epitaxial Silicon PNP Epitaxial Silicon PNP Epitaxial
Is it lead-free? Lead free Contains lead Contains lead Lead free
Parts packaging code TO-92 TO-92 TO-92 TO-92
package instruction LEAD FREE, SC-43A, TO-92(1), 3 PIN TO-92(1), 3 PIN CYLINDRICAL, O-PBCY-T3 LEAD FREE, SC-43A, TO-92(1), 3 PIN
Contacts 3 3 3 3
Reach Compliance Code compli compli compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 35 V 35 V 50 V 35 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 10 10 60
JEDEC-95 code TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Is it Rohs certified? conform to incompatible - conform to
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Base Number Matches 1 - 1 1

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