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BZD27-C18T/R

Description
DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size91KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BZD27-C18T/R Overview

DIODE 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

BZD27-C18T/R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage16.8 V
Shell connectionISOLATED
Maximum clamping voltage25.6 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LELF-R2
Maximum non-repetitive peak reverse power dissipation300 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.8 W
Certification statusNot Qualified
Maximum reverse current5 µA
surface mountYES
technologyAVALANCHE
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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