Standard SRAM, 1KX4, 55ns, MOS, CDIP18
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
package instruction | DIP, DIP18,.3 |
Reach Compliance Code | unknown |
Maximum access time | 55 ns |
I/O type | COMMON |
JESD-30 code | R-XDIP-T18 |
JESD-609 code | e0 |
memory density | 4096 bit |
Memory IC Type | STANDARD SRAM |
memory width | 4 |
Number of terminals | 18 |
word count | 1024 words |
character code | 1000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 1KX4 |
Output characteristics | 3-STATE |
Package body material | CERAMIC |
encapsulated code | DIP |
Encapsulate equivalent code | DIP18,.3 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
power supply | 5 V |
Certification status | Not Qualified |
Maximum slew rate | 0.15 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | MOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Base Number Matches | 1 |
SYD2149H-3 | SYD2149HL-3 | SYD2149H-2 | SYD2149HL | SYC2149H | SYC2149H-2 | SYD2149H | |
---|---|---|---|---|---|---|---|
Description | Standard SRAM, 1KX4, 55ns, MOS, CDIP18 | Standard SRAM, 1KX4, 55ns, MOS, CDIP18 | Standard SRAM, 1KX4, 45ns, MOS, CDIP18 | Standard SRAM, 1KX4, 70ns, MOS, CDIP18 | Standard SRAM, 1KX4, 70ns, MOS, CDIP18 | Standard SRAM, 1KX4, 45ns, MOS, CDIP18 | Standard SRAM, 1KX4, 70ns, MOS, CDIP18 |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
package instruction | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 | DIP, DIP18,.3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
Maximum access time | 55 ns | 55 ns | 45 ns | 70 ns | 70 ns | 45 ns | 70 ns |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 | R-XDIP-T18 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
memory density | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bit |
Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
memory width | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
Number of terminals | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
word count | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words | 1024 words |
character code | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 | 1000 |
Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 1KX4 | 1KX4 | 1KX4 | 1KX4 | 1KX4 | 1KX4 | 1KX4 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC | CERAMIC |
encapsulated code | DIP | DIP | DIP | DIP | DIP | DIP | DIP |
Encapsulate equivalent code | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 | DIP18,.3 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum slew rate | 0.15 mA | 0.125 mA | 0.15 mA | 0.125 mA | 0.15 mA | 0.15 mA | 0.15 mA |
Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
surface mount | NO | NO | NO | NO | NO | NO | NO |
technology | MOS | MOS | MOS | MOS | MOS | MOS | MOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
Base Number Matches | 1 | 1 | 1 | 1 | - | - | - |