S52KF18B datasheet, PDF - EEWORLD Datasheet

S52KF18B: DescriptionSilicon Controlled Rectifier, 1500A I(T)RMS, 960000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element; CategoryAnalog mixed-signal IC Trigger device; File Size245KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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S52KF18B Overview

Silicon Controlled Rectifier, 1500A I(T)RMS, 960000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown
Nominal circuit commutation break time	60 µs
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us
Maximum DC gate trigger current	200 mA
Maximum DC gate trigger voltage	2.5 V
Maximum holding current	500 mA
JESD-30 code	O-CEDB-N2
Maximum leakage current	100 mA
Humidity sensitivity level	1
On-state non-repetitive peak current	24000 A
Number of components	1
Number of terminals	2
Maximum on-state current	960000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	225
Certification status	Not Qualified
Maximum rms on-state current	1500 A
Off-state repetitive peak voltage	1800 V
Repeated peak reverse voltage	1800 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

	S52KF18B	S52KF20B
Description	Silicon Controlled Rectifier, 1500A I(T)RMS, 960000mA I(T), 1800V V(DRM), 1800V V(RRM), 1 Element	Silicon Controlled Rectifier, 1500A I(T)RMS, 960000mA I(T), 2000V V(DRM), 2000V V(RRM), 1 Element
Is it Rohs certified?	incompatible	incompatible
package instruction	DISK BUTTON, O-CEDB-N2	DISK BUTTON, O-CEDB-N2
Reach Compliance Code	unknown	unknown
Nominal circuit commutation break time	60 µs	60 µs
Configuration	SINGLE	SINGLE
Critical rise rate of minimum off-state voltage	500 V/us	500 V/us
Maximum DC gate trigger current	200 mA	200 mA
Maximum DC gate trigger voltage	2.5 V	2.5 V
Maximum holding current	500 mA	500 mA
JESD-30 code	O-CEDB-N2	O-CEDB-N2
Maximum leakage current	100 mA	100 mA
Humidity sensitivity level	1	1
On-state non-repetitive peak current	24000 A	24000 A
Number of components	1	1
Number of terminals	2	2
Maximum on-state current	960000 A	960000 A
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON
Peak Reflow Temperature (Celsius)	225	225
Certification status	Not Qualified	Not Qualified
Maximum rms on-state current	1500 A	1500 A
Off-state repetitive peak voltage	1800 V	2000 V
Repeated peak reverse voltage	1800 V	2000 V
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	END	END
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	SCR	SCR

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