TB32G datasheet, PDF - EEWORLD Datasheet

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TB32G: Description3.0A Glass Passivated Bridge Rectifier; CategoryDiscrete semiconductor diode; File Size165KB，4 Pages; ManufacturerTAITRON Components; Websitehttp://www.taitroncomponents.com/; Environmental Compliance

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TB32G Overview

3.0A Glass Passivated Bridge Rectifier

TB32G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TAITRON Components
package instruction	S-PUFM-W4
Reach Compliance Code	unknow
Other features	UL RECOGNIZED
Minimum breakdown voltage	200 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	S-PUFM-W4
Maximum non-repetitive peak forward current	50 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	SQUARE
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal form	WIRE
Terminal location	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

TB32G Related Products

	TB32G	TB31G	TB34G	TB305G	TB310G	TB36G	TB38G
Description	3.0A Glass Passivated Bridge Rectifier	3.0A Glass Passivated Bridge Rectifier	3.0A Glass Passivated Bridge Rectifier	3.0A Glass Passivated Bridge Rectifier	3.0A Glass Passivated Bridge Rectifier	3.0A Glass Passivated Bridge Rectifier	3.0A Glass Passivated Bridge Rectifier
Is it Rohs certified?	conform to	conform to	-	conform to	conform to	conform to	conform to
Maker	TAITRON Components	TAITRON Components	-	TAITRON Components	TAITRON Components	TAITRON Components	TAITRON Components
package instruction	S-PUFM-W4	S-PUFM-W4	-	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4
Reach Compliance Code	unknow	unknow	-	unknow	unknow	unknow	unknow
Other features	UL RECOGNIZED	UL RECOGNIZED	-	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	200 V	100 V	-	50 V	1000 V	600 V	800 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	S-PUFM-W4	S-PUFM-W4	-	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4	S-PUFM-W4
Maximum non-repetitive peak forward current	50 A	50 A	-	50 A	50 A	50 A	50 A
Number of components	4	4	-	4	4	4	4
Phase	1	1	-	1	1	1	1
Number of terminals	4	4	-	4	4	4	4
Maximum operating temperature	150 °C	150 °C	-	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	3 A	3 A	-	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	SQUARE	SQUARE	-	SQUARE	SQUARE	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT	-	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	200 V	100 V	-	50 V	1000 V	600 V	800 V
surface mount	NO	NO	-	NO	NO	NO	NO
Terminal form	WIRE	WIRE	-	WIRE	WIRE	WIRE	WIRE
Terminal location	UPPER	UPPER	-	UPPER	UPPER	UPPER	UPPER
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	-	1	1	1	1

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