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SMBB780-1100

Description
1 ELEMENT, INFRARED LED, 780nm, ROHS COMPLIANT PACKAGE-2
CategoryLED optoelectronic/LED    photoelectric   
File Size191KB,6 Pages
ManufacturerEpitex Inc
Websitehttp://www.epitex.com
Download Datasheet Parametric View All

SMBB780-1100 Overview

1 ELEMENT, INFRARED LED, 780nm, ROHS COMPLIANT PACKAGE-2

SMBB780-1100 Parametric

Parameter NameAttribute value
package instructionROHS COMPLIANT PACKAGE-2
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum forward current0.8 A
Number of functions1
Maximum operating temperature100 °C
Minimum operating temperature-40 °C
Optoelectronic device typesINFRARED LED
Nominal output power330 mW
peak wavelength780 nm
shapeRECTANGULAR
Base Number Matches1
epitex

Opto-Device & Custom LED
High Power Top LED SMBB780-1100
Lead ( Pb ) Free Product – RoHS Compliant
PRELIMINARY
SMBB780-1100
Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Chip Number
(4) Peak Wavelength
4) Package
(1) Lead Frame Die
(2)
Package Resin
(3)
Lens
High Power Top LED
SMBB780-1100 is an AlGaAs LED mounted on copper heatsink with a 5x5 mm package.
These devices are available to be operated and 300mW/sr at IFP=2A.
Outer
dimension (Unit: mm)
High Power Top LED
SMBB780-1100
AlGaAs
1000um*1000um
1pce
780nm typ.
Silver Plated on Copper
PA9T Resin
Silicone Resin
Absolute
Maximum Ratings [Ta=25°C]
Item
Symbol
Power Dissipation
P
D
Forward Current
I
F
Pulse Forward Current
I
FP
Reverse Voltage
V
R
Thermal Resistance
R
thja
Junction Temperature
T
j
Operating Temperature
T
OPR
Storage Temperature
T
STG
Soldering Temperature
T
SOL
Maximum Rated Value
2000
800
2000
5
10
100
-40 ~ +85
-40 ~ +100
250
Unit
mW
mA
mA
V
K/W
°C
°C
°C
°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 5 seconds at 250°C
Electro-Optical
Characteristics [Ta=25°C typ.]
Item
Symbol Condition
V
F
I
F
=800mA
Forward Voltage
V
FP
I
FP
=2A
I
F
=800mA
Radiated Power
P
O
I
FP
=2A
I
F
=800mA
Radiant Intensity
I
E
I
FP
=2A
Peak Wavelength
P
I
F
=800mA
Half Width

I
F
=800mA
Viewing Half Angle


I
F
=800mA
‡Radiated Power is measured by S3584-08.
‡Radiant Intensity is measured by Tektronix J-6512.
Minimum
220
770
Typical
2.0
3.0
290
720
120
300
780
30
±63
Maximum
2.5
Unit
V
mW
mW/sr
790
nm
nm
deg.
EPITEX INC.: 66-3 Minami-Kawabe Cho, Higashi-Kujyo, Minami-Ku, Kyoto, Japan
Tel: ++81-75-682-2338
Fax: ++81-75-682-2267
e-mail : sales-dep@epitex.com
http://www.epitex.com/
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