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HYB18M1G160BF-7.5

Description
DDR DRAM, 64MX16, 6.5ns, CMOS, PBGA60, 11 X 10.50 MM, 1 MM HEIGHT, GREEN, PLASTIC, MO-207J, VFBGA-60
Categorystorage    storage   
File Size3MB,65 Pages
ManufacturerQIMONDA
Environmental Compliance
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HYB18M1G160BF-7.5 Overview

DDR DRAM, 64MX16, 6.5ns, CMOS, PBGA60, 11 X 10.50 MM, 1 MM HEIGHT, GREEN, PLASTIC, MO-207J, VFBGA-60

HYB18M1G160BF-7.5 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeDSBGA
package instructionTFBGA, BGA60,9X10,32
Contacts60
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFOUR BANK PAGE BURST
Maximum access time6.5 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
interleaved burst length2,4,8,16
JESD-30 codeR-PBGA-B60
length11 mm
memory density1073741824 bit
Memory IC TypeDDR DRAM
memory width16
Humidity sensitivity level3
Number of functions1
Number of ports1
Number of terminals60
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Encapsulate equivalent codeBGA60,9X10,32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
power supply1.8 V
Certification statusNot Qualified
refresh cycle8192
Maximum seat height1.07 mm
self refreshYES
Continuous burst length2,4,8,16
Maximum standby current0.0012 A
Maximum slew rate0.27 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
width10.5 mm
Base Number Matches1

HYB18M1G160BF-7.5 Related Products

HYB18M1G160BF-7.5 HYB18M1G161BF-7.5
Description DDR DRAM, 64MX16, 6.5ns, CMOS, PBGA60, 11 X 10.50 MM, 1 MM HEIGHT, GREEN, PLASTIC, MO-207J, VFBGA-60 DDR DRAM, 64MX16, 6.5ns, CMOS, PBGA60, 11 X 10.50 MM, 1 MM HEIGHT, GREEN, PLASTIC, MO-207J, VFBGA-60
Is it Rohs certified? conform to conform to
Parts packaging code DSBGA DSBGA
package instruction TFBGA, BGA60,9X10,32 TFBGA, BGA60,9X10,32
Contacts 60 60
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Maximum access time 6.5 ns 6.5 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz 133 MHz
I/O type COMMON COMMON
interleaved burst length 2,4,8,16 2,4,8,16
JESD-30 code R-PBGA-B60 R-PBGA-B60
length 11 mm 11 mm
memory density 1073741824 bit 1073741824 bit
Memory IC Type DDR DRAM DDR DRAM
memory width 16 16
Humidity sensitivity level 3 3
Number of functions 1 1
Number of ports 1 1
Number of terminals 60 60
word count 67108864 words 67108864 words
character code 64000000 64000000
Operating mode SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C
organize 64MX16 64MX16
Output characteristics 3-STATE 3-STATE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TFBGA TFBGA
Encapsulate equivalent code BGA60,9X10,32 BGA60,9X10,32
Package shape RECTANGULAR RECTANGULAR
Package form GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius) 260 260
power supply 1.8 V 1.8 V
Certification status Not Qualified Not Qualified
refresh cycle 8192 8192
Maximum seat height 1.07 mm 1.07 mm
self refresh YES YES
Continuous burst length 2,4,8,16 2,4,8,16
Maximum standby current 0.0012 A 0.0012 A
Maximum slew rate 0.27 mA 0.27 mA
Maximum supply voltage (Vsup) 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V
surface mount YES YES
technology CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL
Terminal form BALL BALL
Terminal pitch 0.8 mm 0.8 mm
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40
width 10.5 mm 10.5 mm
Base Number Matches 1 1

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