Agilent MGA-545P8
1–7 GHz Medium Power Amplifier
Data Sheet
Description
Agilent’s MGA-545P8 is an
economical, low current, medium
power, easy-to-use GaAs MMIC
amplifier that offers excellent
power output at 5.8 GHz. Although
optimized for 5.8 GHz applications,
the MGA-545P8 is suitable for other
applications in the 1 to 7 GHz
frequency range.
With the addition of a simple input
match, the MGA-545P8 offers a
small signal gain of 11.5 dB, a
saturated power output of 22 dBm
and a saturated gain of 9.5 dB at
Pin Connections and Package Marking
SOURCE
(THERMAL/RF GND)
5.8 GHz. The MGA-545P8 has a
nominal current consumption of
92 mA in saturated mode and
135 mA in linear mode at a device
voltage of 3.3 V with power added
efficiency of 46% in saturated
mode.
The MGA-545P8 is housed in the
2X2 mm-8L LPCC package. This
package offers good thermal
dissipation and very good high
frequency characteristics making
it appropriate for medium power
applications through 7 GHz.
Specifications
• 3.3 V, 92 mA, 5.825 GHz at saturation
mode
• 22 dBm saturated power across
1-7 GHz
• 9.5 dB gain
• 46% PAE
• 3.3 V, 135 mA, 5.825 GHz at linear
mode
• 11.5 dB small signal gain
• Pout = 16 dBm at 5.6% EVM
• 34 dBm OIP3 at 2.7 V
Features
• Unconditionally stable
• Single +3.3 V operation
• Small package size –
2.0 x 2.0 x 0.75 mm
3
• Point MTTF > 300 years
[2]
• MSL-1 and Pb-free and Halogen-free
• Tape-and-reel packaging option
available
Applications
The MGA-545P8 is ideal for use as
driver amplifier or power amplifier in:
• 3-4 GHz fixed wireless access (WLL)
• 5-6 GHz fixed wireless access
(HiperLAN/UNII)
• 5-6 GHz WLAN 802.11a NIC and AP
• Other applications in the 1-7 GHz
frequency range
Notes:
1. Enhancement mode technology employs a
single positive V
gs
, eliminating the need of
negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed
MTTF data.
3. Conform to JEDEC reference outline
MO229 for DRP-N.
Simplified Schematic
PIN 8
PIN 7 (OUT)
PIN 6
PIN 5
PIN 1
PIN 2 (IN)
PIN 3
PIN 4
BIAS
FET
OUTPUT
& V
d
INPUT
BOTTOM VIEW
PIN 1
IN
PIN 3
PIN 4
PIN 8
4Tx
OUT
PIN 6
PIN 5
RF GND
TOP VIEW
Note:
Package marking provides orientation and
identification.
“4T”= Device Code
“x” = Date code indicates the month of manufacture.
MGA-545P8 Absolute Maximum Ratings
[1]
Parameter
V
d
P
in
θ
jc
Tj
T
STG
Device Voltage, RF output to ground
CW RF Input Power
Thermal Resistance
[2]
Junction Temperature
Storage Temperature
Units
V
dBm
°C/W
W
°C
°C
Absolute Maximum
5.0
20
124
0.8
150
–65 to 150
Notes:
1. Operation of this device in excess of any
of these limits may cause permanent
damage.
2. Thermal resistance measured using
150°C Liquid Crystal Measurement
Technique.
3. Board (package belly) temperature T
b
is
25°C. Derate 8 mW/°C for T
b
> 51°C.
Pdiss Total Power Dissipation
[3]
0.01 µF
1000 pF
V
DD
10 pF
50
Ω
RF INPUT
10 pF
1
2
3
4
8
4.7 nH
12 pF
50
Ω
RF OUTPUT
OPEN-CIRCUITED STUB
(34 mil x 72 mil)
4Tx
7
6
5
Figure 1. Production test circuit.
This circuit represents a match for maximum gain and saturated power.
0.01 µF
12 pF
1000 pF
10 pF
4.7 nH
CONTACTOR
10 pF
Figure 2. Close-up of production test board. Rogers 4350 Er = 3.48
±
0.05, thickness = 10 mils.
2
MGA-545P8 Electrical Specifications
T
c
= 25˚C, V
d
= 3.3 V, unless otherwise noted
Symbol
Gtest_sat
Parameter and Test Condition
Gain in test circuit at saturation
For all frequencies refer to note [3]
unless noted otherwise
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 5.825 GHz
[1]
f = 6.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 5.825 GHz
[1]
f = 6.0 GHz
f = 5.825 GHz
[1]
f = 5.825 GHz
[1]
f = 5.825 GHz
[1]
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GH
f = 5.0 GHz
f = 5.825 GHz
[2]
f = 6.0 GHz
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 5.825 GHz
[1]
f = 6.0 GHz
f = 5.725 GHz
[1]
f = 5.725 GHz
[2]
f = 1.0 GHz
f = 2.0 GHz
f = 3.0 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 5.825 GHz
[2]
f = 6.0 GHz
Units
dB
Min.
Typ.
20.0
16.3
13.4
11.6
10.05
9.5
8.7
22.4
18.6
15.9
13.5
12
11.5
11.3
22
92
135
21.5
21.7
21.3
21.8
21.2
21.0
20.6
46.3
46.0
48
44
45
46
47
34
5.6
2.6
2.7
2.9
3.3
3.6
4.4
5.2
–
Max.
8.5
dB
10.5
Gtest_ss
Gain in test circuit at small signal
For all frequencies refer to note [3]
unless noted otherwise
10.5
dBm
mA
mA
dBm
21.5
80
95
13.8
–
115
155
Psat
Ids_sat
Idss
P1dB
Pout at 2.5 dB gain compression
Drain Current at saturation
Drain Current at small signal
Output Power at 1 dB compression point
For all frequencies refer to note [3]
unless noted otherwise
PAE
Power Added Efficiency at Psat
[4]
For all frequencies refer to note [3]
unless noted otherwise
%
40
dBm
%
dB
31
OIP3
EVM
NF
Output Third Order Intercept Point [2.7 V]
Error Vector Magnitude
Pout = 16 dBm; 54 Mbps data rate
Noise Figure
For all frequencies refer to note [3]
unless noted otherwise.
3
Notes:
1. Measurements made on a fixed tuned production test board (figure 1), which was optimized for gain and saturated power. Excess circuit losses had
been de-embedded from actual measurement. Typical data based on at least 500 parts sample size from 3 wafer lots. Future wafers allocated to this
product may have nominal values anywhere within the upper and lower spec limits.
2. Measurement was taken on demo board at which it was tuned for maximum gain and saturated power. Refer to application note.
3. Measurement was done in a 50
Ω
microstrip line, which was tuned for maximum gain and saturated power for each frequency with external double
stub tuners.
−
4. Power Added Efficiency at Psat is calculated using the following formula:
η
=
Pout = Psat in watts
pa
Vdd
×
Id
Pin = Input drive power in watts
Vdd = 3.3 V
Id = Ids_sat in Ampere
MGA-545P8 Typical Performance, Tc = 25°C, V
d
= 3.3 V unless stated otherwise.
24
22
20
SSGAIN (dB)
18
16
14
12
10
1
2
3
4
5
6
7
2.7 V
3.0 V
3.3 V
4.0 V
25
23
21
SSGAIN (dB)
G-SAT (dB)
19
17
15
13
11
9
7
1
2
3
4
5
6
7
–40°C
25°C
85°C
22
20
18
16
14
12
10
8
6
1
2
3
4
5
6
7
2.7 V
3.0 V
3.3 V
4.0 V
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 3. Small signal gain vs. frequency and
voltage
[1,5]
.
Figure 4. Small signal gain vs. frequency and
temperature
[1,5]
.
Figure 5. Saturated gain vs. frequency and
voltage
[2,3,5]
.
26
24
26
24
24
23
22
OP1dB (dBm)
P-SAT (dBm)
P_sat (dBm)
22
20
18
16
14
1
2.7 V
3.0 V
3.3 V
4.0 V
2
3
4
5
6
7
22
20
2.7 V
3.0 V
3.3 V
4.0 V
2
3
4
5
6
7
18
21
–40°C
25°C
85°C
1
2
3
4
5
6
7
16
1
20
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 6. Saturated power vs. frequency and
voltage
[2,3,5]
.
Figure 7. Saturated power vs. frequency and
temperature
[2,3,5]
.
Figure 8. Output power at 1 dB gain
compression vs. frequency and voltage
[2,5]
.
60
55
50
PAE (%)
45
40
35
30
25
1
2
3
4
5
2.7 V
3.0 V
3.3 V
4.0 V
6
7
NF (dB)
6
5
35
34
33
OUTPUT IP3 (dBm)
4
3
2
1
0
1
2.7 V
3.0 V
3.3 V
4.0 V
2
3
4
5
6
7
32
31
30
29
28
27
26
25
2.3
2.6
2.9
3.2
3.5
3.8
4.1
4.4
5.725 GHz
FREQUENCY (GHz)
FREQUENCY (GHz)
VOLTAGE (V)
Figure 9. Power added efficiency vs.
frequency and voltage
[2,3,5]
.
Figure 10. Noise figure vs. frequency and
voltage
[2,5]
.
Figure 11. OIP3 vs. voltage at 5.725 GHz
[4,5]
.
4
155
145
150
110
DEVICE CURRENT (mA)
DEVICE CURRENT (mA)
140
100
135
125
115
105
95
85
75
0
2
2.7 V
3.0 V
3.3 V
4.0 V
4
6
8
10
12
14
130
I
dsat
(mA)
–40°C
25°C
85°C
2.7
3.0
3.3
3.6
3.9
4.2
90
120
110
80
–40°C
25°C
85°C
70
2.4
2.7
3.0
3.3
3.6
3.9
4.2
100
2.4
P
in
(dBm)
VOLTAGE (V)
VOLTAGE (V)
Figure 12. Device current vs. P
in
and
voltage
[4,5]
.
Figure 13. I
d
vs. voltage and temperature (no
RF drive).
Figure 14. Saturated I
d
vs. voltage and
temperature
[3,4]
.
12
10
EVM (64QAM;%)
8
6
4
2
0
-10
2.7 V
3.0 V
3.3 V
4.0 V
10
9
8
EVM (64QAM;%)
7
6
5
4
3
2
1
-5
0
5
10
15
20
0
-20
-15
-10
-5
0
5
10
2.7 V
3.0 V
3.3 V
4.0 V
P
out
(dBm)
P
in
(dBm)
Figure 15. EVM(64QAM) vs. P
out
and voltage
at 5.725 GHz
[4]
.
Figure 16. EVM(64QAM) vs. P
in
and voltage at
5.725 GHz
[4]
.
Notes:
1. Measurement was done in a 50
Ω
microstrip line with input and output tuned for maximum gain using double stub-tuners.
2. Measurement was done in a 50
Ω
microstrip line with input tuned for gain and output tuned for maximum P
sat
using double-stub tuners.
3. Measured at 2.5 dB gain compression.
4. Measurement at 5.825 GHz were made on a fixed tuned demo board that was tuned for maximum saturated output power and maximum gain.
5. Circuit losses have been de-embedded from actual measurement.
5
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