2N6109 datasheet, PDF - EEWORLD Datasheet

2N6109: Description7 A, PNP, Si, POWER TRANSISTOR, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size262KB，6 Pages; ManufacturerETC

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7 A, PNP, Si, POWER TRANSISTOR, TO-220AB

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	7 A
Processing package description	TO-220, 3 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	MATTE TIN
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	DARLINGTON
Shell connection	COLLECTOR
Number of components	1
Transistor component materials	SILICON
Maximum ambient power consumption	40 W
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	2.3
Rated crossover frequency	10 MHz

	2N6109	2N6290	6290
Description	7 A, PNP, Si, POWER TRANSISTOR, TO-220AB	7 A, PNP, Si, POWER TRANSISTOR, TO-220AB	7 A, PNP, Si, POWER TRANSISTOR, TO-220AB
Number of terminals	3	3	3
Transistor polarity	PNP	PNP	PNP
Maximum collector current	7 A	7 A	7 A
Processing package description	TO-220, 3 PIN	TO-220, 3 PIN	TO-220, 3 PIN
Lead-free	Yes	Yes	Yes
EU RoHS regulations	Yes	Yes	Yes
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
terminal coating	MATTE TIN	MATTE TIN	MATTE TIN
Terminal location	SINGLE	SINGLE	SINGLE
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	DARLINGTON	DARLINGTON	DARLINGTON
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Number of components	1	1	1
Transistor component materials	SILICON	SILICON	SILICON
Maximum ambient power consumption	40 W	40 W	40 W
Transistor type	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
Minimum DC amplification factor	2.3	2.3	2.3
Rated crossover frequency	10 MHz	10 MHz	10 MHz

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