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SXVP0106N2

Description
Small Signal Field-Effect Transistor, 0.45A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
CategoryDiscrete semiconductor    The transistor   
File Size129KB,4 Pages
ManufacturerSupertex
Download Datasheet Parametric View All

SXVP0106N2 Overview

Small Signal Field-Effect Transistor, 0.45A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39

SXVP0106N2 Parametric

Parameter NameAttribute value
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.45 A
Maximum drain-source on-resistance8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)8 pF
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeP-CHANNEL
Maximum power consumption environment3.5 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
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