SPDT
DC to 40 GHz, RF – MEMS
FEATURES
Drain 1
Gate 1
Drain 2
Drain
Source
■
■
■
■
■
High Isolation (20 dB typical @10 GHz)
Low Insertion Loss (0.4 dB typical @10 GHz)
Typical On Resistance < 3.0
Ω
Hermetically Sealed
Gate 2
Long Life (>10
11
cycles) Electrostatic Actuation, High Off Resis-
tance (>1 GΩ), Fast Switching (5 µs), Current Handling (400
mA) ±100V Signal Range, Near Zero Harmonic Distortion, No
Quiescent Power Dissipation
RF Input Parameters
Frequency
Insertion Loss
Isolation
Return Loss
Input IP3 (Two-tone
inputs 10 GHz and
10.001 GHz @ 27 dBm)
RF Power Rating
Active Life Cycle,
(cold-Switched)
2 GHz
< 0.3 dB
> 32 dB
< -20 dB
5 GHz
RMSW 220D™
DESCRIPTION
The RMSW220D™ is a Single Pole
Double Throw (SPDT) Reflective RF
Switch utilizing Radant MEMS Inc.
recent breakthrough technology
that delivers high-linearity, high-
isolation and low-insertion loss in a
wafer-scale package.
This device is ideally suited for use
in many applications such as wire-
less (i.e. handsets, WLAN, broad-
band wireless access, GPS receiv-
ers), RF and Microwave Multi-throw
switches, Radar Beam Steering An-
tennas, Phase shifters, and RF Test
Equipment.
Functional Block Diagram
10 GHz
< 0.5 dB
> 20 dB
< -19 dB
> 65 dBm
30 dBm
10
11
25 GHz
< 0.6 dB
> 17 dB
< -18 dB
35 GHz
< 0.8 dB
> 13 dB
< -16 dB
< 0.4 dB
> 25 dB
< -20 dB
Notes: Product performance specifications and switch operation are for cold switching only.
Hot switching with RF input power greater than –10 dBm can degrade lifetime of switch.
DC Input Parameters
Actuation Voltage, typ.
Actuation Power Consumption
Switch Current, Max. (Cold)
90
2µW @ 1 kHz switching rate
250 mA
50 mA
5
µs
- 40
̊
C to 85
̊
C
- 55
̊
C to 150
̊
C
Source
Drain
Gate
Drain
Gate
Switch Current, Max. (Hot)
Switching Time, Max.
(10kHz, Varies with Control Voltage)
Operating Temperatures
Storage Temperatures
255 Hudson Road, Stow, MA01775
●
Tel: 978-562-3866
●
Fax: 978-562-6277
●
Email:
sales@radantmems.com
SPDT
DC to 40 GHz, RF – MEMS
Typical Performance
dB
-10
-15
-20
2
4
3
5
6
7
S21 - rf1
S21 - rf2
S11 - rf1
S11 - rf2
8
dB
5
0
-5
-10
4
1
2
3
dB
S21 - rf1
0.2
0
-0.2
-0.4
1
2
S21 - rf2
S11 - rf1
S11 - rf2
dB
5
0
1
2
3
4
8
2 GHz
-34.33 dB
5 GHz
-26.69 dB
10 GHz
-19.96 dB
Insertion Loss
2 GHz
-0.29 dB
5 GHz
-0.33 dB
10 GHz
-0.36 dB
15 GHz
-0.40 dB
20 GHz
-0.39 dB
25 GHz
-0.43 dB
30 GHz
-0.65 dB
35 GHz
-0.80 dB
3
4
5
6
7
-5
-10
Return Loss
-15
-20
-25
-30
-35
-40
-45
-25
Isolation
-30
-35
-40
-45
-50
-55
-60
Start: 50 MHz
Stop: 40 GHz
1
Return Loss
-15
-20
-25
-30
-35
-40
-45
15 GHz
-16.90 dB
20 GHz
-17.20 dB
25 GHz
-19.25 dB
30 GHz
-16.62 dB
35 GHz
-13.27 dB
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-1.8
Start: 50 MHz
5
6
7
8
5
6
7
8
Stop: 40 GHz
Isolation
*Measurement results include the effects of two 1 mil diameter bond wires on each RF pad.
Insertion Loss
Handling Procedures
The following precautions should be observed to avoid damage:
aged by static electricity. Use proper ESD precautions when handling these devices.
Static sensitivity —
RF MEMS switches integrated circuits are ESD sensitive and can be dam-
Maximum Rating —
The absolute maximum input power is 2 watts.
Nominal Device Dimensions
100 µm
RMI
Bond Pad
650
µm
1.37
1.45 mm
mm
300
µm
200
µm
250
µm
Gold metal on backside
300
µm
1.42
mm
1.45
100
µm
255 Hudson Road, Stow, MA01775
●
Tel: 978-562-3866
●
Fax: 978-562-6277
●
Email:
sales@radantmems.com
京公网安备 11010802033920号
EEWORLD
