Power Field-Effect Transistor, 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
package instruction | UNCASED CHIP, R-XUUC-N2 |
Reach Compliance Code | compliant |
Other features | LOGIC LEVEL COMPATIBLE |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain-source on-resistance | 0.05 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-XUUC-N2 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | UNCASED CHIP |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal surface | TIN LEAD |
Terminal form | NO LEAD |
Terminal location | UPPER |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |