512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Numonyx ( Micron ) |
Parts packaging code | BGA |
package instruction | TFBGA, BGA107,9X12,32 |
Contacts | 107 |
Reach Compliance Code | unknow |
Is Samacsys | N |
Maximum access time | 96 ns |
Other features | SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; PSRAM IS ORGANISED AS 4M X 16 |
JESD-30 code | R-PBGA-B107 |
length | 11 mm |
memory density | 536870912 bi |
Memory IC Type | MEMORY CIRCUIT |
memory width | 16 |
Mixed memory types | FLASH+PSRAM |
Number of functions | 1 |
Number of terminals | 107 |
word count | 33554432 words |
character code | 32000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -30 °C |
organize | 32MX16 |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Encapsulate equivalent code | BGA107,9X12,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 1.8 V |
Certification status | Not Qualified |
Maximum seat height | 1.2 mm |
Maximum supply voltage (Vsup) | 1.95 V |
Minimum supply voltage (Vsup) | 1.7 V |
Nominal supply voltage (Vsup) | 1.8 V |
surface mount | YES |
technology | CMOS |
Temperature level | OTHER |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
width | 8 mm |
Base Number Matches | 1 |
M36P0R9060E0ZACE | M36P0R9060E0 | MIP2F20MTSCF | |
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Description | 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package | 512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package | Silicon MOS type integrated circuit |