TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Reach Compliance Code | compliant |
Configuration | Single |
Maximum drain current (Abs) (ID) | 2 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 0.57 W |
surface mount | YES |
Base Number Matches | 1 |
UPA508TE-AT | UPA508TE | UPA508TE-T1 | UPA508TE-T2 | UPA508TE-T2-A | UPA508TE-T1-AT | |
---|---|---|---|---|---|---|
Description | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP | 2000mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-95, 5 PIN | UPA508TE-T1 | UPA508TE-T2 | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP |
Reach Compliance Code | compliant | unknown | unknown | unknown | compliant | compliant |
Is it Rohs certified? | conform to | incompatible | - | - | conform to | conform to |
Configuration | Single | SINGLE WITH BUILT-IN DIODE | - | - | Single | Single |
Maximum drain current (Abs) (ID) | 2 A | 2 A | - | - | 2 A | 2 A |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | - | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C | 150 °C | - | - | 150 °C | 150 °C |
Polarity/channel type | N-CHANNEL | N-CHANNEL | - | - | N-CHANNEL | N-CHANNEL |
Maximum power dissipation(Abs) | 0.57 W | 0.57 W | - | - | 0.57 W | 0.57 W |
surface mount | YES | YES | - | - | YES | YES |
Maker | - | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation | Renesas Electronics Corporation |