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UPA508TE-AT

Description
TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP
CategoryDiscrete semiconductor    The transistor   
File Size274KB,10 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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UPA508TE-AT Overview

TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP

UPA508TE-AT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
ConfigurationSingle
Maximum drain current (Abs) (ID)2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.57 W
surface mountYES
Base Number Matches1

UPA508TE-AT Related Products

UPA508TE-AT UPA508TE UPA508TE-T1 UPA508TE-T2 UPA508TE-T2-A UPA508TE-T1-AT
Description TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP 2000mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIMOLD, SC-95, 5 PIN UPA508TE-T1 UPA508TE-T2 TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,2A I(D),TSOP
Reach Compliance Code compliant unknown unknown unknown compliant compliant
Is it Rohs certified? conform to incompatible - - conform to conform to
Configuration Single SINGLE WITH BUILT-IN DIODE - - Single Single
Maximum drain current (Abs) (ID) 2 A 2 A - - 2 A 2 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR - - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE - - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C - - 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL - - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.57 W 0.57 W - - 0.57 W 0.57 W
surface mount YES YES - - YES YES
Maker - Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation

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