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KBU8G

Description
8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size75KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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KBU8G Overview

8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

KBU8G Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Maximum average input current8 A
Processing package descriptionCASE KBU, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formWire
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit6.9 W
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage400 V
Maximum non-repetitive peak forward current300 A

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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