APT50GF120B2R
APT50GF120LR
1200V
80A
APT50GF120B2R/LR
Fast IGBT
APT50GF120B2R
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
T-Max
™
(B2R)
TO-264
(LR)
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
G
C
E
G
C
C
E
APT50GF120LR
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
CGR
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
GE
= 20KΩ)
Gate-Emitter Voltage
Continuous Collector Current
4
All Ratings: T
C
= 25°C unless otherwise specified.
APT50GF120B2R/LR
UNIT
1200
1200
±20
@ T
C
= 25°C
Volts
80
50
160
100
85
500
-55 to 150
300
°C
mJ
Watts
Amps
Continuous Collector Current @ T
C
= 90°C
Pulsed Collector Current
1
@ T
C
= 25°C
RBSOA Clamped Inductive Load Current @ R
g
= 11Ω T
C
= 90°C
Single Pulse Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
2
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
V
GE
(TH)
V
CE
(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
1200
4.5
5.5
2.9
3.5
6.5
3.4
4.1
0.5
5.0
±100
nA
052-6216 Rev B 5-2001
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 125°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
Volts
I
CES
I
GES
mA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT50GF120B2R/LR
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25°C)
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
R
G
= 10Ω
MIN
TYP
MAX
UNIT
3450
330
230
325
35
195
47
178
320
190
45
4200
470
350
490
40
300
94
360
480
380
90
210
880
210
13
12
25
100
230
790
210
22
mJ
S
ns
mJ
ns
ns
nC
pF
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Switching Losses
Forward Transconductance
Inductive Switching (150°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
T
J
= +150°C
102
440
102
6.4
5.6
12.0
Inductive Switching (25°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10Ω
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
46
115
390
100
10.8
8
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
ΘJC
R
ΘJA
W
T
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.32
40
0.22
oz
gm
Package Weight
6.1
10
lb•in
N•m
Torque
052-6216 Rev B 5-2001
Mounting Torque (
using a 6-32 or 3mm Binding Head Machine Screw
)
1.1
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
, R
GE
= 25
Ω
, L = 68µH, T
j
= 25°C
See MIL-STD-750 Method 3471
The maximum current is limited by lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
80
I
C
, COLLECTOR CURRENT (AMPERES)
80
V
GE
=17, 15 & 13V
11V
I
C
, COLLECTOR CURRENT (AMPERES)
APT50GF120B2R/LR
V
GE
=17, 15 & 13V
11V
60
60
10V
40
9V
20
8V
7V
0
4
8
12
16
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 2, Typical Output Characteristics (T
J
= 150°C)
0
160
100
OPERATION
LIMITED
BY
VCE (SAT)
40
10V
20
9V
8V
0
4
8
12
16
20
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 1, Typical Output Characteristics (T
J
= 25°C)
80
I
C
, COLLECTOR CURRENT (AMPERES)
250µsec. Pulse Test
V
GE
= 15V
0
T
C
=-55°C
60 T
C
=+25°C
T
C
=+150°C
40
I
C
, COLLECTOR CURRENT (AMPERES)
100µs
10
1ms
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
1
1
10
100
1200
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 4, Maximum Forward Safe Operating Area
20
10ms
0
0
2
4
6
8
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 3, Typical Output Characteristics @ V
GE
= 15V
V
GE
, GATE-TO-EMITTER VOLTAGE (VOLTS)
10,000
f = 1MHz
20
I
C
= I
C2
T
J
= +25°C
5,000
C, CAPACITANCE (pF)
C
ies
16
V
CE
=240V
V
CE
=600V
8
12
1,000
500
C
oes
4
C
res
100
.01
0.1
1.0
10
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage
1.0
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
100
200
300
400
500
Q
g
, TOTAL GATE CHARGE (nC)
Figure 6, Gate Charges vs Gate-To-Emitter Voltage
0
0
0.5
D=0.5
0.1
0.05
0.2
0.1
0.05
0.01
0.005
0.02
0.01
Note:
PDM
t2
Duty Factor D = t1/t
2
Peak TJ = PDM x Z
θJC
+ TC
SINGLE PULSE
0.001
-5
10
10
-4
10
-3
10
-2
10
-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
052-6216 Rev B 5-2001
t1
APT50GF120B2R/LR
5.0
I
C
, COLLECTOR CURRENT (AMPERES)
V
CE
(SAT), COLLECTOR-TO-EMITTER
SATURATION VOLTAGE (VOLTS)
80
4.0
I
C1
60
2.0
I
C2
40
0.5 I
C2
1.5
20
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
-50 -25 0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8, Typical V
CE
(SAT) Voltage vs Junction Temperature
1.2
SWITCHING ENERGY LOSSES (mJ)
1.0
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Figure 9, Maximum Collector Current vs Case Temperature
40
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +25°C
I
C
= I
C2
0
25
1.1
30
E
off
20
1
0.9
E
on
10
0.8
-50 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 10, Breakdown Voltage vs Junction Temperature
50
I
C1
0.7
20
40
60
80
100
R
G
, GATE RESISTANCE (OHMS)
Figure 11, Typical Switching Energy Losses vs Gate Resistance
8
SWITCHING ENERGY LOSSES (mJ)
V
CC
= 0.66 V
CES
V
GE
= +15V
T
J
= +125°C
R
G
= 10
Ω
0
0
TOTAL SWITCHING ENERGY LOSSES (mJ)
6
I
C2
1
0.5 I
C2
4
E
off
2
E
on
0
V
CC
= 0.66 V
CES
V
GE
= +15V
R
G
= 10
Ω
-50 -25
0
25 50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 12, Typical Switching Energy Losses vs. Junction Temperature
TOTAL SWITCHING ENERGY LOSSES (mJ)
0.1
10
20
30
40
50
I
C
, COLLECTOR CURRENT (AMPERES)
Figure 13, Typical Switching Energy Losses vs Collector Current
For Both:
Duty Cycle = 50%
T
J
= +125°C
T
sink
= +90°C
Gate drive as specified
Power dissapation = 110W
I
LOAD
= I
RMS
of fundamental
0
100
10
052-6216 Rev B 5-2001
1
0.1
1.0
10
F, FREQUENCY (KHz)
Figure 14,Typical Load Current vs Frequency
100
1000
APT50GF120B2R/LR
V
CHARGE
*DRIVER SAME TYPE AS D.U.T.
V
CC
= 0.66 V
CES
E
t s
= E
on
+ E
off
90%
B
10%
t
d
(on)
V
C
90%
D.U.T.
V
CE
(SAT)
10%
t
f
E
on
t=2us
E
off
I
C
t
d
(off)
90%
A
DRIVER*
D.U.T.
I
C
100uH
V
CLAMP
R
G
A
V
C
B
A
V
C
I
C
10%
t
r
Figure 15, Switching Loss Test Circuit and Waveforms
2
V
CE
(off)
90%
V
GE
(on)
V
CC
R
L
=
2
.5 V
CES
I
C2
D.U.T.
10%
1
V
GE
(off)
t
d
(on)
t
r
t
d
(off)
t
f
From
Gate Drive
Circuitry
R
G
V
CE
(on)
1
Figure 16, Resistive Switching Time Test Circuit and Waveforms
T-MAX™ Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Collector
Collector
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
4.50
(.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.79 (.110)
2.59 (.102)
3.18 (.125)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
052-6216 Rev B 5-2001
Gate
Collector
Emitter
Gate
Collector
Emitter
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