Low Capacitance, Low Charge Injection,
±15 V/+12 V
iCMOS
SPST in SOT-23
ADG1201/ADG1202
FEATURES
2.4 pF off capacitance
<1 pC charge injection
Low leakage; 0.6 nA maximum @ 85°C
120 Ω on resistance
Fully specified at ±15 V, +12 V
No V
L
supply required
3 V logic-compatible inputs
Rail-to-rail operation
6-lead SOT-23 package
S
FUNCTIONAL BLOCK DIAGRAM
ADG1201
D
S
ADG1202
D
IN
IN
06576-001
SWITCHES SHOWN FOR A LOGIC “1” INPUT
Figure 1.
APPLICATIONS
Automatic test equipment
Data acquisition systems
Battery-powered systems
Sample-and-hold systems
Audio signal routing
Video signal routing
Communication systems
GENERAL DESCRIPTION
The ADG1201/ADG1202 are monolithic complementary
metal-oxide semiconductor (CMOS) devices containing
an SPST switch designed in an
iCMOS®
(industrial CMOS)
process.
iCMOS
is a modular manufacturing process
combining high voltage CMOS and bipolar technologies.
It enables the development of a wide range of high perform-
ance analog ICs capable of 33 V operation in a footprint
that no previous generation of high voltage parts has been
able to achieve. Unlike analog ICs using conventional
CMOS processes,
iCMOS
components can tolerate high
supply voltages while providing increased performance,
dramatically lower power consumption, and reduced
package size.
The ultralow capacitance and charge injection of these
switches make them ideal solutions for data acquisition
and sample-and-hold applications, where low glitch and fast
settling are required. Fast switching speed coupled with
high signal bandwidth make the parts suitable for video
signal switching.
iCMOS
construction ensures ultralow power dissipation,
making the parts ideally suited for portable and battery-
powered instruments.
The ADG1201/ADG1202 contain a single-pole/single-throw
(SPST) switch. Figure 1 shows that with a logic input of 1, the
switch of the ADG1201 is closed and that of the ADG1202 is
open. Each switch conducts equally well in both directions when
on and has an input signal range that extends to the supplies. In
the off condition, signal levels up to the supplies are blocked.
PRODUCT HIGHLIGHTS
1.
2.
3.
4.
5.
6.
Ultralow capacitance.
<1 pC charge injection.
Ultralow leakage.
3 V logic-compatible digital inputs: V
IH
= 2.0 V, V
IL
= 0.8 V.
No V
L
logic power supply required.
SOT-23 package.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2008 Analog Devices, Inc. All rights reserved.
ADG1201/ADG1202
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Product Highlights ........................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Dual Supply ................................................................................... 3
Single Supply ................................................................................. 4
Absolute Maximum Ratings ............................................................5
ESD Caution...................................................................................5
Pin Configuration and Function Descriptions..............................6
Typical Performance Characteristics ..............................................7
Test Circuits ..................................................................................... 10
Terminology .................................................................................... 12
Outline Dimensions ....................................................................... 13
Ordering Guide .......................................................................... 13
REVISION HISTORY
2/08—Revision 0: Initial Version
Rev. 0 | Page 2 of 16
ADG1201/ADG1202
SPECIFICATIONS
DUAL SUPPLY
V
DD
= 15 V ± 10%, V
SS
= −15 V ± 10%, GND = 0 V, unless otherwise noted.
Table 1.
B Version
1
−40°C to
−40°C to
+85°C
+125°C
V
DD
to V
SS
120
200
20
60
±0.004
±0.1
±0.004
±0.1
±0.04
±0.15
240
72
270
79
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source Off Leakage, I
S
(Off )
Drain Off Leakage, I
D
(Off )
Channel On Leakage, I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current, I
INL
or I
INH
Digital Input Capacitance, C
IN
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Charge Injection
Off Isolation
Total Harmonic Distortion + Noise
−3 dB Bandwidth
C
S
(Off )
C
D
(Off )
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
I
DD
I
SS
V
DD
/V
SS
1
2
25°C
Unit
V
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns max
pC typ
dB typ
% typ
MHz typ
pF typ
pF max
pF typ
pF max
pF typ
pF max
μA typ
μA max
μA typ
μA max
μA typ
μA max
V min/max
Test Conditions/Comments
V
DD
= +13.5 V, V
SS
= −13.5 V
V
S
= ±10 V, I
S
= −1 mA; see Figure 20
V
S
= −5 V, 0 V, and +5 V; I
S
= −1 mA
V
DD
= +16.5 V, V
SS
= −16.5 V
V
S
= ±10 V, V
D
= ±10 V; see Figure 21
V
S
= ±10 V, V
D
= ±10 V; see Figure 21
V
S
= V
D
= ±10 V; see Figure 22
±0.6
±0.6
±0.6
±1
±1
±1
2.0
0.8
0.005
±0.1
2.5
140
170
90
105
−0.8
80
0.15
660
2.4
3
2.8
3.3
4.7
5.6
0.001
1.0
60
95
0.001
1.0
±5 to ±16.5
V
IN
= V
INL
or V
INH
200
130
230
141
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 10 V; see Figure 26
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 10 V; see Figure 26
V
S
= 0 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 27
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz; see Figure 23
R
L
= 10 kΩ, 5 V rms, f = 20 Hz to 20 kHz
R
L
= 50 Ω, C
L
= 5 pF; see Figure 24
V
S
= 0 V, f = 1 MHz
V
S
= 0 V, f = 1 MHz
V
S
= 0 V, f = 1 MHz
V
S
= 0 V, f = 1 MHz
V
S
= 0 V, f = 1 MHz
V
S
= 0 V, f = 1 MHz
V
DD
= +16.5 V, V
SS
= −16.5 V
Digital inputs = 0 V or V
DD
Digital inputs = 5 V
Digital inputs = 0 V, 5 V or V
DD
GND = 0 V
Temperature range for B version is
−40°C
to +125°C.
Guaranteed by design, not subject to production test.
Rev. 0 | Page 3 of 16
ADG1201/ADG1202
SINGLE SUPPLY
V
DD
= 12 V ± 10%, V
SS
= 0 V, GND = 0 V, unless otherwise noted.
Table 2.
B Version
1
−40°C to
−40°C to
+85°C
+125°C
0 V to V
DD
300
475
60
±0.006
±0.1
±0.006
±0.1
±0.04
±0.15
567
625
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (R
ON
)
On Resistance Flatness (R
FLAT(ON)
)
LEAKAGE CURRENTS
Source Off Leakage, I
S
(Off )
Drain Off Leakage, I
D
(Off )
Channel On Leakage, I
D
, I
S
(On)
DIGITAL INPUTS
Input High Voltage, V
INH
Input Low Voltage, V
INL
Input Current, I
INL
or I
INH
Digital Input Capacitance, C
IN
DYNAMIC CHARACTERISTICS
2
t
ON
t
OFF
Charge Injection
Off Isolation
−3 dB Bandwidth
C
S
(Off )
C
D
(Off )
C
D
, C
S
(On)
POWER REQUIREMENTS
I
DD
I
DD
V
DD
1
2
25°C
Unit
V
Ω typ
Ω max
Ω typ
nA typ
nA max
nA typ
nA max
nA typ
nA max
V min
V max
μA typ
μA max
pF typ
ns typ
ns max
ns typ
ns max
pC typ
dB typ
MHz typ
pF typ
pF max
pF typ
pF max
pF typ
pF max
μA typ
μA max
μA typ
μA max
V min/max
Test Conditions/Comments
V
DD
= 10.8 V, V
SS
= 0 V
V
S
= 0 V to 10 V, I
S
= −1 mA; see Figure 20
V
S
= 3 V, 6 V, and 9 V, I
S
= −1 mA
V
DD
= 13.2 V, V
SS
= 0 V
V
S
= 1 V or 10 V, V
D
= 10 V or 1 V; see Figure 21
V
S
= 1 V or 10 V, V
D
= 10 V or 1 V; see Figure 21
V
S
= V
D
= 1 V or 10 V; see Figure 22
±0.6
±0.6
±0.6
±1
±1
±1
2.0
0.8
0.001
±0.1
3
190
250
120
155
0.8
80
520
2.7
3.3
3.1
3.6
5.3
6.3
0.001
1.0
60
95
+5/+16.5
V
IN
= V
INL
or V
INH
295
190
340
210
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 8 V; see Figure 26
R
L
= 300 Ω, C
L
= 35 pF
V
S
= 8 V; see Figure 26
V
S
= 6 V, R
S
= 0 Ω, C
L
= 1 nF; see Figure 27
R
L
= 50 Ω, C
L
= 5 pF, f = 1 MHz;
see Figure 23
R
L
= 50 Ω, C
L
= 5 pF; see Figure 24
V
S
= 6 V, f = 1 MHz
V
S
= 6 V, f = 1 MHz
V
S
= 6 V, f = 1 MHz
V
S
= 6 V, f = 1 MHz
V
S
= 6 V, f = 1 MHz
V
S
= 6 V, f = 1 MHz
V
DD
= 13.2 V
Digital inputs = 0 V or V
DD
Digital inputs = 5 V
V
SS
= 0 V, GND = 0 V
Temperature range for B version is
−40°C
to +125°C.
Guaranteed by design, not subject to production test.
Rev. 0 | Page 4 of 16
ADG1201/ADG1202
ABSOLUTE MAXIMUM RATINGS
T
A
= 25°C, unless otherwise noted.
Table 3.
Parameter
V
DD
to V
SS
V
DD
to GND
V
SS
to GND
Analog Inputs
1
Digital Inputs
1
Peak Current, S or D
Continuous Current per
Channel, S or D
Operating Temperature Range
Industrial (B Version)
Storage Temperature Range
Junction Temperature
6 Lead SOT-23
θ
JA
,Thermal Impedance
θ
JC
, Thermal Impedance
Reflow Soldering Peak
Temperature, Pb-free
1
Rating
35 V
−0.3 V to +25 V
+0.3 V to −25 V
V
SS
– 0.3 V to V
DD
+ 0.3 V or
30 mA, whichever occurs first
GND – 0.3 V to V
DD
+ 0.3 V or
30 mA, whichever occurs first
100 mA (pulsed at 1 ms, 10%
duty cycle maximum)
30 mA
−40°C to +125°C
−65°C to +150°C
150°C
229.6°C/W
91.99°C/W
260°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Rev. 0 | Page 5 of 16
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