AN0140WG datasheet, PDF - EEWORLD Datasheet

AN0140WG: DescriptionTRANSISTOR,MOSFET,ARRAY,N-CHANNEL,400V V(BR)DSS,30MA I(D),SO; CategoryDiscrete semiconductor The transistor; File Size126KB，5 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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AN0140WG Overview

TRANSISTOR,MOSFET,ARRAY,N-CHANNEL,400V V(BR)DSS,30MA I(D),SO

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	PLASTIC, SO-20
Reach Compliance Code	not_compliant
Configuration	COMMON SOURCE, 8 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	400 V
Maximum drain current (Abs) (ID)	0.03 A
Maximum drain current (ID)	0.03 A
Maximum drain-source on-resistance	350 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	1.5 pF
JESD-30 code	R-PDSO-G20
JESD-609 code	e0
Number of components	8
Number of terminals	20
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	1.4 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

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