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NAND04GW4B2DN1E

Description
Flash Memory
Categorystorage    storage   
File Size2MB,72 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
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NAND04GW4B2DN1E Overview

Flash Memory

NAND04GW4B2DN1E Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Base Number Matches1
NAND04G-B2D, NAND08G-BxC
4-Gbit, 8-Gbit, 2112-byte/1056-word page
multiplane architecture, 1.8 V or 3 V, NAND flash memories
Features
High density NAND flash memory
– Up to 8 Gbits of memory array
– Cost-effective solution for mass storage
applications
NAND interface
– x8 or x16 bus width
– Multiplexed address/data
Supply voltage: 1.8 V or 3.0 V device
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
Block size
– x8 device: (128 K + 4 K spare) bytes
– x16 device: (64 K + 2 K spare) words
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic error
detection code (EDC)
Cache read mode
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks):
1.5 ms (typ)
Status register
Electronic signature
Chip enable ‘don’t care’
Serial number option
NAND08G-BxC
TSOP48 12 x 20 mm (N)
LGA
LGA52 12 x 17 mm (ZL)
r
Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
ONFI 1.0 compliant command set
Data integrity
– 100, 000 program/erase cycles (with ECC
(error correction code))
– 10 years data retention
ECOPACK
®
packages
Device summary
Part number
NAND04GR3B2D
Table 1.
Reference
NAND04G-B2D
NAND04GW3B2D
NAND04GR4B2D
(1)
NAND04GW4B2D
(1)
NAND08GR3B2C,
NAND08GW3B2C
NAND08GR4B2C
(1)
NAND08GW4B2C
(1)
NAND08GR3B4C
NAND08GW3B4C
1. x16 organization only available for MCP products.
May 2008
Rev 5
1/72
www.numonyx.com
1

NAND04GW4B2DN1E Related Products

NAND04GW4B2DN1E NAND08GR3B4CN6F NAND04GW3B2DN6F NAND08GR3B4CN6E NAND04GR4B2DN1E NAND08GW3B4CN6F NAND08GW3B4CN1E
Description Flash Memory Flash Memory Flash, 512MX8, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48 Flash Memory Flash Memory Flash Memory Flash Memory
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
Maker - - - Micron Technology Micron Technology Micron Technology Micron Technology
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