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M29F400BT45N6E

Description
256K X 16 FLASH 5V PROM, 45 ns, PDSO48
Categorystorage    storage   
File Size204KB,40 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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M29F400BT45N6E Overview

256K X 16 FLASH 5V PROM, 45 ns, PDSO48

M29F400BT45N6E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum access time45 ns
Other featuresTOP BOOT BLOCK
Spare memory width8
startup blockTOP
command user interfaceYES
Data pollingYES
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G48
JESD-609 codee3/e6
length18.4 mm
memory density4194304 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size1,2,1,7
Number of terminals48
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply5 V
Programming voltage5 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size16K,8K,32K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN/TIN BISMUTH
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width12 mm
M29F400BT
M29F400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
single supply Flash memory
Feature summary
Single 5 V ± 10% supply voltage for program,
erase and read operations
Access time: 45 ns
Programming time
– 8 µs per Byte/Word typical
11 memory blocks
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
Program/erase controller
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase
algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
Erase Suspend and Resume modes
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
100,000 program/erase cycles per block
20-year data retention
– Defectivity below 1 ppm/year
TSOP48 (N)
12 x 20mm
44
1
SO44 (MT)
Electronic signature
– Manufacturer Code: 0020h
– Top Device Code M29F400BT: 00D5h
– Bottom Device Code M29F400BB: 00D6h
ECOPACK
®
packages available
December 2006
Rev 4
1/40
www.st.com
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