NMC27C256CQ70 datasheet, PDF - EEWORLD Datasheet

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NMC27C256CQ70: DescriptionIC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC; Categorystorage storage; File Size77KB，2 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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NMC27C256CQ70 Overview

IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC

NMC27C256CQ70 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	DIP, DIP28,.6
Reach Compliance Code	compliant
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T28
JESD-609 code	e0
memory density	262144 bit
Memory IC Type	UVPROM
memory width	8
Number of terminals	28
word count	32768 words
character code	32000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
power supply	5 V
Programming voltage	12.75 V
Certification status	Not Qualified
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Base Number Matches	1

NMC27C256CQ70 Related Products

	NMC27C256CQ70	NMC27C256BN120	NMC27C256CQ55	NMC27C256CQ90	NMC27C256BQ150	NMC27C256BQ200
Description	IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC	IC,EPROM,32KX8,CMOS,DIP,28PIN,PLASTIC	IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC	IC,EPROM,32KX8,CMOS,DIP,28PIN,CERAMIC	IC 32K X 8 UVPROM, 150 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM	IC 32K X 8 UVPROM, 200 ns, CDIP28, WINDOWED, CERAMIC, DIP-28, Programmable ROM
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	compliant	compliant	compliant	compliant	unknown	unknown
Maximum access time	70 ns	120 ns	55 ns	90 ns	150 ns	200 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDIP-T28	R-PDIP-T28	R-XDIP-T28	R-XDIP-T28	R-GDIP-T28	R-GDIP-T28
JESD-609 code	e0	e0	e0	e0	e0	e0
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	UVPROM	OTP ROM	UVPROM	UVPROM	UVPROM	UVPROM
memory width	8	8	8	8	8	8
Number of terminals	28	28	28	28	28	28
word count	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000	32000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	PLASTIC/EPOXY	CERAMIC	CERAMIC	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED
encapsulated code	DIP	DIP	DIP	DIP	WDIP	WDIP
Encapsulate equivalent code	DIP28,.6	DIP28,.6	DIP28,.6	DIP28,.6	DIP28,.6	DIP28,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE, WINDOW	IN-LINE, WINDOW
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Programming voltage	12.75 V	12.75 V	12.75 V	12.75 V	12.75 V	12.75 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
package instruction	DIP, DIP28,.6	-	DIP, DIP28,.6	DIP, DIP28,.6	WDIP, DIP28,.6	WDIP, DIP28,.6
Base Number Matches	1	1	1	1	-	-

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