SMBJ170ATRTB datasheet, PDF - EEWORLD Datasheet

SMBJ170ATRTB: DescriptionTrans Voltage Suppressor Diode, 600W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN; CategoryDiscrete semiconductor diode; File Size354KB，5 Pages; ManufacturerFagor Electrónica; Environmental Compliance

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SMBJ170ATRTB Overview

Trans Voltage Suppressor Diode, 600W, 170V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PDSO-C2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage	209 V
Minimum breakdown voltage	189 V
Maximum clamping voltage	275 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	UNIDIRECTIONAL
Guideline	AEC-Q101
Maximum repetitive peak reverse voltage	170 V
surface mount	YES
technology	AVALANCHE
Terminal surface	MATTE TIN
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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