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HGTG10N120BND

Description
35A, 1200V, N-CHANNEL IGBT, TO-247
CategoryDiscrete semiconductor    The transistor   
File Size82KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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HGTG10N120BND Overview

35A, 1200V, N-CHANNEL IGBT, TO-247

HGTG10N120BND Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codenot_compliant
Other featuresLOW CONDUCTION LOSS
Maximum collector current (IC)35 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)200 ns
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-247
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)298 W
Certification statusNot Qualified
Maximum rise time (tr)15 ns
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)330 ns
Nominal on time (ton)32 ns
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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