SFH615A/SFH6156
Vishay Semiconductors
Optocoupler, Phototransistor Output, High Reliability,
5300 V
RMS
Features
• Excellent CTR Linearity Depending on
Forward Current
• Isolation Test Voltage, 5300 V
RMS
e3
• Fast Switching Times
• Low CTR Degradation
• Low Coupling Capacitance
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1
A
1
C
2
17448
4
3
C
E
1
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Order Information
Part
SFH615A-1
SFH615A-2
SFH615A-3
SFH615A-4
SFH6156-1
SFH6156-2
SFH6156-3
SFH6156-4
SFH615A-1X006
SFH615A-1X007
SFH615A-2X006
SFH615A-2X007
SFH615A-2X009
SFH615A-3X006
SFH615A-3X007
SFH615A-3X008
SFH615A-3X009
SFH615A-4X006
SFH615A-4X007
SFH615A-4X008
SFH615A-4X009
Remarks
CTR 40 - 80 %, DIP-4
CTR 63 - 125 %, DIP-4
CTR 100 - 200 %, DIP-4
CTR 160 - 320 %, DIP-4
CTR 40 - 80 %, SMD-4
CTR 63 - 125 %, SMD-4
CTR 100 - 200 %, SMD-4
CTR 160 - 320 %, SMD-4
CTR 40 - 80 %, DIP-4 400 mil (option 6)
CTR 40 - 80 %, SMD-4 (option 7)
CTR 63 - 125 %, DIP-4 400 mil (option 6)
CTR 63 - 125 %, SMD-4 (option 7)
CTR 63 - 125 %, SMD-4 (option 9)
CTR 100 - 200 %, DIP-4 400 mil (option 6)
CTR 100 - 200 %, SMD-4 (option 7)
CTR 100 - 200 %, SMD-4 (option 8)
CTR 100 - 200 %, SMD-4 (option 9)
CTR 160 - 320 %, DIP-4 400 mil (option 6)
CTR 160 - 320 %, SMD-4 (option 7)
CTR 160 - 320 %, SMD-4 (option 8)
CTR 160 - 320 %, SMD-4 (option 9)
Applications
• Switchmode power supply
• Telecom
• Battery powered equipment
Description
The SFH615A (DIP) and SFH6156 (SMD) feature a
variety of transfer ratios, low coupling capacitance
and high isolation voltage. These couplers have a
GaAs infrared diode emitter, which is optically cou-
pled to a silicon planar phototransistor detector, and
is incorporated in a plastic DIP-4 or SMD package.
The coupling devices are designed for signal trans-
mission between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of > 8.0 mm are
achieved with option 6. This version complies with
IEC 60950 (DIN VDE 0805) for reinforced insulation
up to an operation voltage of 400 V
RMS
or DC.
Specifications subject to change.
For additional information on the available options refer to Option
Information.
See TAPE AND REEL Section for 4-pin optocouplers T0 with 90°
rotation.
Document Number 83671
Rev. 2.0, 06-Sep-06
www.vishay.com
1
SFH615A/SFH6156
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Reverse voltage
DC Forward current
Surge forward current
t
p
≤
10 µs
Test condition
Symbol
V
R
I
F
I
FSM
Value
6.0
60
2.5
Unit
V
mA
A
Output
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
t
p
≤
1.0 ms
Test condition
Symbol
V
CE
V
CEO
I
C
I
C
Value
70
7.0
50
100
Unit
V
V
mA
mA
Coupler
Parameter
Isolation test voltage (between
emitter and detector, refered to
climate DIN 40046, part 2,
Nov. 74
Creepage
Clearance
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
Storage temperature range
Ambient temperature range
Soldering temperature
max. 10 s, Dip soldering
distance to seating plane
≥
1.5 mm
R
IO
R
IO
T
stg
T
amb
T
sld
t = 1.0 s
Test condition
Symbol
V
ISO
Value
5300
Unit
V
RMS
≥
7.0
≥
7.0
≥
0.4
≥
175
≥
10
12
≥
10
11
- 55 to + 150
- 55 to + 100
260
mm
mm
mm
Ω
Ω
°C
°C
°C
200
P - Power Dissipation (mW)
tot
150
Phototransistor
100
50
Diode
0
0
18483
25
50
75
100 125
T
amb
- Ambient Temperature (°C)
150
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
www.vishay.com
2
Document Number 83671
Rev. 2.0, 06-Sep-06
SFH615A/SFH6156
Vishay Semiconductors
Thermal Characteristics
The thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the tem-
peratures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB,
layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics
of Optocouplers Application note.
Parameter
LED Power dissipation
Output Power dissipation
Maximum LED junction temperature
Maximum output die junction temperature
Thermal resistance, Junction Emitter to Board
Thermal resistance, Junction Emitter to Case
Thermal resistance, Junction Detector to Board
Thermal resistance, Junction Detector to Case
Thermal resistance, Junction Emitter to Junction Detector
Thermal resistance, Board to Ambient*
Thermal resistance, Case to Ambient*
* For 2 layer FR4 board (4" x 3" x 0.062)
T
A
Test condition
at 25 °C
at 25 °C
Symbol
P
diss
P
diss
T
jmax
T
jmax
Value
100
150
125
125
173
149
111
127
95
195
3573
Unit
mW
mW
°C
°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
θ
EB
θ
EC
θ
DB
θ
DC
θ
ED
θ
BA
θ
CA
θ
CA
T
C
Package
θ
DC
T
JD
θ
EC
θ
DE
T
JE
θ
DB
T
B
θ
EB
θ
BA
19996
T
A
Document Number 83671
Rev. 2.0, 06-Sep-06
www.vishay.com
3
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
