EEWORLDEEWORLDEEWORLD

Part Number

Search

NAND128W4A0BV1F

Description
Flash, 8MX16, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48
Categorystorage    storage   
File Size917KB,57 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance  
Download Datasheet Parametric View All

NAND128W4A0BV1F Overview

Flash, 8MX16, 35ns, PDSO48, 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48

NAND128W4A0BV1F Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instruction12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time35 ns
JESD-30 codeR-PDSO-G48
length15.4 mm
memory density134217728 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeVSSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height0.65 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNAND TYPE
width12 mm
Base Number Matches1
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
Up to 1 Gbit memory array
Up to 32 Mbit spare area
Cost effective solutions for mass storage
applications
x8 or x16 bus width
Multiplexed Address/ Data
Pinout compatibility for all densities
1.8V device: V
DD
= 1.7 to 1.95V
3.0V device: V
DD
= 2.7 to 3.6V
Figure 1. Packages
NAND INTERFACE
TSOP48 12 x 20mm
SUPPLY VOLTAGE
PAGE SIZE
x8 device: (512 + 16 spare) Bytes
x16 device: (256 + 8 spare) Words
x8 device: (16K + 512 spare) Bytes
x16 device: (8K + 256 spare) Words
Random access: 12µs (max)
Sequential access: 50ns (min)
Page program time: 200µs (typ)
Fast page copy without external buffering
USOP48 12 x 17 x 0.65mm
FBGA
BLOCK SIZE
VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 9 x 11 x 1mm
TFBGA63 9 x 11 x 1.2mm
PAGE READ / PROGRAM
DATA INTEGRITY
100,000 Program/Erase cycles
10 years Data Retention
Lead-Free Components are Compliant
with the RoHS Directive
Error Correction Code software and
hardware models
Bad Blocks Management and Wear
Leveling algorithms
File System OS Native reference software
Hardware simulation models
COPY BACK PROGRAM MODE
FAST BLOCK ERASE
Block erase time: 2ms (Typ)
RoHS COMPLIANCE
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
Simple interface with microcontroller
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
Program/Erase locked during Power
transitions
DEVELOPMENT TOOLS
February 2005
1/57

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号