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SPC164-12

Description
Power Bipolar Transistor, 20A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,
CategoryDiscrete semiconductor    The transistor   
File Size51KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

SPC164-12 Overview

Power Bipolar Transistor, 20A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin,

SPC164-12 Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)20 A
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-63
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power consumption environment200 W
Maximum power dissipation(Abs)200 W
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Transistor component materialsSILICON
VCEsat-Max0.25 V
Base Number Matches1
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