Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| package instruction | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | unknown |
| Shell connection | COLLECTOR |
| Maximum collector current (IC) | 10 A |
| Collector-emitter maximum voltage | 400 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 8 |
| JEDEC-95 code | TO-204AA |
| JESD-30 code | O-MBFM-P2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 200 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Maximum power consumption environment | 100 W |
| Maximum power dissipation(Abs) | 5.5 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | PIN/PEG |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| VCEsat-Max | 2 V |
| Base Number Matches | 1 |
| TIP563 | TIP562 | |
|---|---|---|
| Description | Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin | Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin |
| Is it Rohs certified? | incompatible | incompatible |
| package instruction | FLANGE MOUNT, O-MBFM-P2 | FLANGE MOUNT, O-MBFM-P2 |
| Reach Compliance Code | unknown | unknown |
| Shell connection | COLLECTOR | COLLECTOR |
| Maximum collector current (IC) | 10 A | 10 A |
| Collector-emitter maximum voltage | 400 V | 300 V |
| Configuration | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 8 | 8 |
| JEDEC-95 code | TO-204AA | TO-204AA |
| JESD-30 code | O-MBFM-P2 | O-MBFM-P2 |
| JESD-609 code | e0 | e0 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Maximum operating temperature | 200 °C | 200 °C |
| Package body material | METAL | METAL |
| Package shape | ROUND | ROUND |
| Package form | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | NPN | NPN |
| Maximum power consumption environment | 100 W | 100 W |
| Maximum power dissipation(Abs) | 5.5 W | 5.5 W |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | PIN/PEG | PIN/PEG |
| Terminal location | BOTTOM | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| VCEsat-Max | 2 V | 2 V |
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