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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1951
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The
µ
PA1951 is a switching device, which can be driven
directly by a 1.8 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.32
+0.1
–0.05
0.65
–0.15
+0.1
0.16
+0.1
–0.06
1.5
FEATURES
•
1.8 V drive available
•
Low on-state resistance
R
DS(on)1
= 88 mΩ MAX. (V
GS
=
−4.5V,
I
D
=
−1.5
A)
R
DS(on)2
= 114 mΩ MAX. (V
GS
=
−3.0
V, I
D
=
−1.5
A)
R
DS(on)3
= 133 mΩ MAX. (V
GS
=
−2.5
V, I
D
=
−1.5
A)
R
DS(on)4
= 234 mΩ MAX. (V
GS
=
−1.8
V, I
D
=
−1.0
A)
2.8 ±0.2
6
5
4
0 to 0.1
1
2
3
0.95
0.95
0.65
0.9 to 1.1
1.9
2.9 ±0.2
6: Drain 1
1: Gate 1
5: Source 1
4: Drain 2
3: Gate 2
2: Source 2
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-95 (Mini Mold Thin Type)
µ
PA1951TE
Marking: TN
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
EQUIVALENT CIRCUITS
−12
m8.0
m2.5
m10
1.15
0.57
150
−55
to +150
V
V
A
A
W
W
°C
°C
Gate 1
Gate
Protection
Diode
Drain 1
Drain 2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
Body
Diode
Gate 2
Gate
Protection
Diode
Body
Diode
Total Power Dissipation (2 units)
Total Power Dissipation (1 unit)
Channel Temperature
Storage Temperature
Note2
Source 1
Source 2
Notes 1.
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
2.
Mounted on FR-4 board of 5000 mm x 1.1 mm, t
≤
5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G15613EJ1V0DS00 (1st edition)
Date Published August 2002 NS CP(K)
Printed in Japan
©
2001
京公网安备 11010802033920号
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