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KTA2014F-Y

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TFSM, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size51KB,3 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
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KTA2014F-Y Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TFSM, 3 PIN

KTA2014F-Y Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.15 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
Base Number Matches1
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Excellent
h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
・Low
Noise : NF=1dB(Typ.), 10dB(Max.).
A
G
KTA2014F
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
K
・Thin
Fine Pitch Small Package.
3
1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-50
-50
-5
-150
-30
50
150
-55½150
UNIT
V
V
V
mA
mA
mW
1. EMITTER
2. BASE
3. COLLECTOR
C
MAXIMUM RATING (Ta=25℃)
TFSM
Marking
S
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1kHz, Rg=10kΩ
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
-0.1
-
4
1.0
J
D
・Complementary
to KTC4075F.
2
DIM
A
B
C
D
E
G
J
K
MILLIMETERS
_
0.6 + 0.05
_
0.8 + 0.05
0.38+0.02/-0.04
_
0.2 + 0.05
_ 0.05
1.0 +
_
0.35+ 0.05
_ 0.05
0.1 +
_
0.15 + 0.05
Type Name
h
FE
Rank
MAX.
-0.1
-0.1
400
-0.3
-
7
10
UNIT
μ
A
μ
A
V
MHz
pF
dB
Note : h
FE
Classification O(2):70½140, Y(4):120½240, GR(6):200½400
2005. 4. 21
Revision No : 0
1/3

KTA2014F-Y Related Products

KTA2014F-Y KTA2014F-O KTA2014F-GR
Description Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TFSM, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TFSM, 3 PIN Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TFSM, 3 PIN
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.15 A 0.15 A 0.15 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 70 200
JESD-30 code R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz 80 MHz
Base Number Matches 1 1 1

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