SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Excellent
h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
・Low
Noise : NF=1dB(Typ.), 10dB(Max.).
A
G
KTA2014F
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
K
・Thin
Fine Pitch Small Package.
3
1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-50
-50
-5
-150
-30
50
150
-55½150
UNIT
V
V
V
mA
mA
mW
℃
℃
1. EMITTER
2. BASE
3. COLLECTOR
C
MAXIMUM RATING (Ta=25℃)
TFSM
Marking
S
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
TEST CONDITION
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1kHz, Rg=10kΩ
MIN.
-
-
70
-
80
-
-
TYP.
-
-
-
-0.1
-
4
1.0
J
D
・Complementary
to KTC4075F.
2
DIM
A
B
C
D
E
G
J
K
MILLIMETERS
_
0.6 + 0.05
_
0.8 + 0.05
0.38+0.02/-0.04
_
0.2 + 0.05
_ 0.05
1.0 +
_
0.35+ 0.05
_ 0.05
0.1 +
_
0.15 + 0.05
Type Name
h
FE
Rank
MAX.
-0.1
-0.1
400
-0.3
-
7
10
UNIT
μ
A
μ
A
V
MHz
pF
dB
Note : h
FE
Classification O(2):70½140, Y(4):120½240, GR(6):200½400
2005. 4. 21
Revision No : 0
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