M50FLW080ANB5G datasheet, PDF - EEWORLD Datasheet

M50FLW080ANB5G: Description1M X 8 FLASH 3V PROM, 11 ns, PQCC32; Categorystorage storage; File Size331KB，64 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/; Environmental Compliance

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1M X 8 FLASH 3V PROM, 11 ns, PQCC32

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	STMicroelectronics
Parts packaging code	TSOP
package instruction	8 X 14 MM, ROHS COMPLIANT, PLASTIC, TSOP-32
Contacts	32
Reach Compliance Code	compli
ECCN code	EAR99
Maximum access time	11 ns
command user interface	YES
Data polling	NO
JESD-30 code	R-PDSO-G32
JESD-609 code	e3/e6
length	12.4 mm
memory density	8388608 bi
Memory IC Type	FLASH
memory width	8
Number of functions	1
Number of departments/size	48,13
Number of terminals	32
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-20 °C
organize	1MX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP32,.56,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Department size	4K,64K
Maximum standby current	0.0001 A
Maximum slew rate	0.06 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	TIN/TIN BISMUTH
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
switch bit	NO
type	NOR TYPE
width	8 mm

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