CJD350TR13TIN/LEAD datasheet, PDF

CJD350TR13TIN/LEAD: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size1MB，4 Pages; ManufacturerCentral Semiconductor

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CJD350TR13TIN/LEAD Overview

Transistor

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Maximum collector current (IC)	0.5 A
Configuration	Single
Minimum DC current gain (hFE)	30
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	15 W
surface mount	YES
Nominal transition frequency (fT)	10 MHz
Base Number Matches	1

	CJD350TR13TIN/LEAD	CJD350BKTIN/LEAD	CJD340TR13TIN/LEAD	CJD350LEADFREE	CJD340LEADFREE
Description	Transistor	Transistor	Transistor	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3
Is it Rohs certified?	incompatible	incompatible	incompatible	conform to	conform to
Reach Compliance Code	unknown	unknown	unknown	compliant	compliant
Maximum collector current (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
Configuration	Single	Single	Single	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30	30	30	30
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	NPN	PNP	NPN
surface mount	YES	YES	YES	YES	YES
Maximum power dissipation(Abs)	15 W	15 W	15 W	-	-
Nominal transition frequency (fT)	10 MHz	10 MHz	10 MHz	-	-
Base Number Matches	1	1	1	-	-

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