M93C76-BN6G/S datasheet, PDF - EEWORLD Datasheet

M93C76-BN6G/S: Description512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8; Categorystorage; File Size227KB，38 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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M93C76-BN6G/S Overview

512 X 16 MICROWIRE BUS SERIAL EEPROM, DSO8

Parameter Name	Attribute value
Number of functions	1
Number of terminals	8
Maximum operating temperature	125 Cel
Minimum operating temperature	-40 Cel
Maximum supply/operating voltage	5.5 V
Minimum supply/operating voltage	4.5 V
Rated supply voltage	5 V
maximum clock frequency	2 MHz
Processing package description	2 X 3 MM, ROHS COMPLIANT, MLP-8
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
Craftsmanship	CMOS
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE, VERY THIN PROFILE
surface mount	Yes
Terminal form	NO LEAD
Terminal spacing	0.5000 mm
terminal coating	NOT SPECIFIED
Terminal location	DUAL
Packaging Materials	UNSPECIFIED
Temperature level	AUTOMOTIVE
memory width	16
organize	512 X 16
storage density	8192 deg
operating mode	SYNCHRONOUS
Number of digits	512 words
Number of digits	512
Spare memory width	8
Memory IC type	MICROWIRE BUS SERIAL EEPROM
serial parallel	SERIAL
Maximum TWC of write cycle	5 ms

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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