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NAND04GW3B2DZL1F

Description
512KX8 FLASH 3V PROM, 20ns, PBGA52, 12 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, LGA-52
Categorystorage    storage   
File Size1MB,69 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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NAND04GW3B2DZL1F Overview

512KX8 FLASH 3V PROM, 20ns, PBGA52, 12 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, LGA-52

NAND04GW3B2DZL1F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeLGA
package instruction12 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, LGA-52
Contacts52
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time20 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B52
JESD-609 codee3/e4
length17 mm
memory density4194304 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size4K
Number of terminals52
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX8
Package body materialPLASTIC/EPOXY
encapsulated codeVBGA
Encapsulate equivalent codeLGA52(UNSPEC)
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE
page size2K words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height0.65 mm
Department size128K
Maximum standby current0.00005 A
Maximum slew rate0.03 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN/NICKEL PALLADIUM GOLD
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
switch bitNO
typeNAND TYPE
width12 mm
Base Number Matches1
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