CBRHDSH1-40LBK datasheet, PDF - EEWORLD Datasheet

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CBRHDSH1-40LBK: DescriptionBridge Rectifier Diode, Schottky, 1 Phase, 1A, 40V V(RRM), Silicon, PLASTIC, HDDIP-4; CategoryDiscrete semiconductor diode; File Size600KB，2 Pages; ManufacturerCentral Semiconductor

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CBRHDSH1-40LBK Overview

Bridge Rectifier Diode, Schottky, 1 Phase, 1A, 40V V(RRM), Silicon, PLASTIC, HDDIP-4

CBRHDSH1-40LBK Parametric

Parameter Name	Attribute value
Parts packaging code	DIP
package instruction	R-PDSO-G4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	0.38 V
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Maximum non-repetitive peak forward current	20 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	125 °C
Minimum operating temperature	-50 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Maximum power dissipation	1.2 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	40 V
surface mount	YES
technology	SCHOTTKY
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Base Number Matches	1

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CBRHDSH1-40L

SURFACE MOUNT

HIGH DENSITY

1 AMP LOW VF SILICON

SCHOTTKY BRIDGE RECTIFIER

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CBRHDSH1-40L

is a full wave bridge rectifier mounted in a durable

epoxy surface mount molded case, utilizing glass

passivated chips.

MARKING CODE: CSH1

FEATURES:

•

Low Leakage Current (20µA TYP @ VRRM)

•

High 1.0A Current Rating

•

Low VF Schottky Diodes (440mV MAX @ IF=1.0A)

HD DIP CASE

MAXIMUM RATINGS:

(TA=25°C unless otherwise noted)

Peak Repetitive Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current

Power Dissipation

Operating Junction Temperature

Storage Temperature

Thermal Resistance

SYMBOL

VRRM

VR

VR(RMS)

IO

IFRM

IFSM

PD

TJ

Tstg

Θ

JA

40

28

1.2

1.7

20

1.2

-50 to +125

-50 to +150

85

UNITS

V

A

W

°C

°C/W

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

IR

VF

CJ

TEST CONDITIONS

VR=40V

VR=40V, TA=100°C

IF=500mA

IF=1.0A

VR=4.0V, f=1.0MHz

TYP

20

5.0

360

390

150

MAX

50

20

380

440

UNITS

µA

mA

mV

pF

R4 (4-January 2010)

CBRHDSH1-40LBK Related Products

	CBRHDSH1-40LBK	CBRHDSH1-40LBKLEADFREE	CBRHDSH1-40LTR13LEADFREE
Description	Bridge Rectifier Diode, Schottky, 1 Phase, 1A, 40V V(RRM), Silicon, PLASTIC, HDDIP-4	Bridge Rectifier Diode, Schottky, 1.2A, 40V V(RRM),	Bridge Rectifier Diode, Schottky, 1.2A, 40V V(RRM),
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	0.38 V	0.38 V	0.38 V
Maximum non-repetitive peak forward current	20 A	20 A	20 A
Number of components	4	4	4
Maximum operating temperature	125 °C	125 °C	125 °C
Maximum output current	1 A	1.2 A	1.2 A
Maximum repetitive peak reverse voltage	40 V	40 V	40 V
surface mount	YES	YES	YES
technology	SCHOTTKY	SCHOTTKY	SCHOTTKY
Base Number Matches	1	1	1
Is it Rohs certified?	-	conform to	conform to

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