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2SD2138A

Description
Silicon NPN triple diffusion planar type Darlington(For power amplification)
CategoryDiscrete semiconductor    The transistor   
File Size42KB,2 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SD2138A Overview

Silicon NPN triple diffusion planar type Darlington(For power amplification)

2SD2138A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, MT-4-A1, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage80 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)2000
JESD-30 codeR-PSIP-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Bismuth/Copper (Sn/Ag/Bi/Cu)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)20 MHz
Base Number Matches1

2SD2138A Related Products

2SD2138A 2SD2138
Description Silicon NPN triple diffusion planar type Darlington(For power amplification) Silicon NPN triple diffusion planar type Darlington(For power amplification)
Is it Rohs certified? conform to conform to
package instruction ROHS COMPLIANT, MT-4-A1, 3 PIN ROHS COMPLIANT, MT-4-A1, 3 PIN
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 2 A 2 A
Collector-emitter maximum voltage 80 V 60 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE) 2000 2000
JESD-30 code R-PSIP-T3 R-PSIP-T3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 2 W 2 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Silver/Bismuth/Copper (Sn/Ag/Bi/Cu) Tin/Silver/Bismuth/Copper (Sn/Ag/Bi/Cu)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 20 MHz 20 MHz
Base Number Matches 1 1

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