THMY7264G0LEG-75 datasheet, PDF

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THMY7264G0LEG-75: DescriptionIC 128M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168, DIMM-168, Dynamic RAM; Categorystorage storage; File Size686KB，14 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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THMY7264G0LEG-75 Overview

IC 128M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168, DIMM-168, Dynamic RAM

THMY7264G0LEG-75 Parametric

Parameter Name	Attribute value
Parts packaging code	DIMM
package instruction	DIMM, DIMM168
Contacts	168
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	DUAL BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N168
length	133.35 mm
memory density	9663676416 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	168
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM168
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	43.05 mm
self refresh	YES
Maximum standby current	0.067 A
Maximum slew rate	7.209 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
width	6.35 mm
Base Number Matches	1

THMY7264G0LEG-75 Related Products

	THMY7264G0LEG-75	THMY7264G0LEG-80
Description	IC 128M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168, DIMM-168, Dynamic RAM	IC 128M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168, DIMM-168, Dynamic RAM
Parts packaging code	DIMM	DIMM
package instruction	DIMM, DIMM168	DIMM, DIMM168
Contacts	168	168
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
access mode	DUAL BANK PAGE BURST	DUAL BANK PAGE BURST
Maximum access time	5.4 ns	6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	125 MHz
I/O type	COMMON	COMMON
JESD-30 code	R-XDMA-N168	R-XDMA-N168
length	133.35 mm	133.35 mm
memory density	9663676416 bit	9663676416 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	72	72
Number of functions	1	1
Number of ports	1	1
Number of terminals	168	168
word count	134217728 words	134217728 words
character code	128000000	128000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C
organize	128MX72	128MX72
Output characteristics	3-STATE	3-STATE
Package body material	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIMM	DIMM
Encapsulate equivalent code	DIMM168	DIMM168
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified
refresh cycle	4096	4096
Maximum seat height	43.05 mm	43.05 mm
self refresh	YES	YES
Maximum standby current	0.067 A	0.067 A
Maximum slew rate	7.209 mA	6.753 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL
width	6.35 mm	6.35 mm

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