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2SD1908

Description
Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size105KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

2SD1908 Overview

Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220MF, 3 PIN

2SD1908 Parametric

Parameter NameAttribute value
Objectid1546485446
Parts packaging codeTO-220MF
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
YTEOL0
Maximum collector current (IC)7 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
Ordering number : EN3971
NPN Epitaxial Planar Silicon Transistor
2SD1908
CRT Display Horizontal Deflection Output
Applications
Features
Package Dimensions
• Fast switching speed.
unit: mm
• Especially suited for use in high-definition CRT display :
2049B-TO-220MF
VCC=6 to 12V.
• Wide ASO and highly resistant to breakdown.
[2SD1908]
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tc=25°C
Tj
Tstg
Conditions
Ratings
E : Emitter
C : Collector
B : Base
SANYO : TO-220MF
330
150
6
7
12
4
1.65
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
C-E Saturation Voltage
B-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
E-B Breakdown Voltage
Fall Time
Symbol
ICBO
IEBO
hFE(1)
hFE(2)
fT
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
tf
Conditions
VCB=200V, IE=0
VEB=5V, IC=0
VCE=1V, IC=1A
VCE=1V, IC=5A
VCE=10V, IC=0.5A
IC=5A, IB=0.5A
IC=5A, IB=0.5A
IC=1mA, IE=0
IC=1mA, RBE=∞
IE=1mA, IC=0
IC=5A, IB1=–IB2=0.5A
Ratings
min
typ
max
100
100
50
40
1
1.2
330
150
6
0.5
MHz
V
V
V
V
V
µs
Unit
µA
mA
15
10
10
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
11697YK (KOTO) 8-0537 No.3971-1/3

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