MB84VD21182EM-70PBS datasheet, PDF

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MB84VD21182EM-70PBS: DescriptionStacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS; Categorystorage storage; File Size304KB，52 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/

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MB84VD21182EM-70PBS Overview

Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS

MB84VD21182EM-70PBS Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SPANSION
Parts packaging code	BGA
package instruction	TFBGA, BGA56,8X8,32
Contacts	56
Reach Compliance Code	compli
Maximum access time	70 ns
Other features	SRAM IS ORGANIZED AS 512K X 8 OR 256K X 16; FLASH MEMORY CAN ALSO CONFIGURABLE AS 2M X 8
JESD-30 code	R-PBGA-B56
JESD-609 code	e0
length	7.2 mm
memory density	16777216 bi
Memory IC Type	MEMORY CIRCUIT
memory width	16
Mixed memory types	FLASH+SRAM
Number of functions	1
Number of terminals	56
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA56,8X8,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	240
power supply	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum standby current	0.000005 A
Maximum slew rate	0.05 mA
Maximum supply voltage (Vsup)	3.3 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	30
width	7 mm

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Description	Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS	Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS	Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS	Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS	Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS	Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS	Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS	Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS	Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS	Stacked MCP (Multi-Chip Package) FLASH MEMORY & SRAM CMOS
Is it Rohs certified?	incompatible	-	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SPANSION	-	-	SPANSION	SPANSION	SPANSION	SPANSION	SPANSION	SPANSION	SPANSION
Parts packaging code	BGA	-	-	BGA	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA56,8X8,32	-	-	TFBGA, BGA56,8X8,32	TFBGA, BGA56,8X8,32	TFBGA, BGA56,8X8,32	TFBGA, BGA56,8X8,32	TFBGA, BGA56,8X8,32	TFBGA, BGA56,8X8,32	TFBGA, BGA56,8X8,32
Contacts	56	-	-	56	56	56	56	56	56	56
Reach Compliance Code	compli	-	-	compli	compli	compli	compli	compli	compli	compli
Maximum access time	70 ns	-	-	70 ns	70 ns	70 ns	70 ns	70 ns	70 ns	70 ns
Other features	SRAM IS ORGANIZED AS 512K X 8 OR 256K X 16; FLASH MEMORY CAN ALSO CONFIGURABLE AS 2M X 8	-	-	SRAM IS ORGANIZED AS 512K X 8 OR 256K X 16; FLASH MEMORY CAN ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANIZED AS 512K X 8 OR 256K X 16; FLASH MEMORY CAN ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANIZED AS 512K X 8 OR 256K X 16; FLASH MEMORY CAN ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANIZED AS 512K X 8 OR 256K X 16; FLASH MEMORY CAN ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANIZED AS 512K X 8 OR 256K X 16; FLASH MEMORY CAN ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANIZED AS 512K X 8 OR 256K X 16; FLASH MEMORY CAN ALSO CONFIGURABLE AS 2M X 8	SRAM IS ORGANIZED AS 512K X 8 OR 256K X 16; FLASH MEMORY CAN ALSO CONFIGURABLE AS 2M X 8
JESD-30 code	R-PBGA-B56	-	-	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56	R-PBGA-B56
JESD-609 code	e0	-	-	e0	e0	e0	e0	e0	e0	e0
length	7.2 mm	-	-	7.2 mm	7.2 mm	7.2 mm	7.2 mm	7.2 mm	7.2 mm	7.2 mm
memory density	16777216 bi	-	-	16777216 bi	16777216 bi	16777216 bi	16777216 bi	16777216 bi	16777216 bi	16777216 bi
Memory IC Type	MEMORY CIRCUIT	-	-	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
memory width	16	-	-	16	16	16	16	16	16	16
Mixed memory types	FLASH+SRAM	-	-	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM
Number of functions	1	-	-	1	1	1	1	1	1	1
Number of terminals	56	-	-	56	56	56	56	56	56	56
word count	1048576 words	-	-	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
character code	1000000	-	-	1000000	1000000	1000000	1000000	1000000	1000000	1000000
Operating mode	ASYNCHRONOUS	-	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	-	-	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	1MX16	-	-	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	-	-	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA56,8X8,32	-	-	BGA56,8X8,32	BGA56,8X8,32	BGA56,8X8,32	BGA56,8X8,32	BGA56,8X8,32	BGA56,8X8,32	BGA56,8X8,32
Package shape	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	-	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	240	-	-	240	240	240	240	240	240	240
power supply	3 V	-	-	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Certification status	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1.2 mm	-	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum standby current	0.000005 A	-	-	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A	0.000005 A
Maximum slew rate	0.05 mA	-	-	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
Maximum supply voltage (Vsup)	3.3 V	-	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Minimum supply voltage (Vsup)	2.7 V	-	-	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	-	-	3 V	3 V	3 V	3 V	3 V	3 V	3 V
surface mount	YES	-	-	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	-	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	-	-	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal surface	TIN LEAD	-	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	BALL	-	-	BALL	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	-	-	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	-	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	30	-	-	30	30	30	30	30	30	30
width	7 mm	-	-	7 mm	7 mm	7 mm	7 mm	7 mm	7 mm	7 mm

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