KBU1002GT0G datasheet, PDF - EEWORLD Datasheet

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KBU1002GT0G: DescriptionBridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN; CategoryDiscrete semiconductor diode; File Size200KB，4 Pages; ManufacturerTaiwan Semiconductor; Websitehttp://www.taiwansemi.com/

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KBU1002GT0G Overview

Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN

KBU1002GT0G Parametric

Parameter Name	Attribute value
package instruction	R-PSFM-W4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	100 V
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-W4
Maximum non-repetitive peak forward current	200 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	100 V
surface mount	NO
Terminal form	WIRE
Terminal location	SINGLE
Base Number Matches	1

KBU1002GT0G Related Products

	KBU1002GT0G	KBU1006GT0G	KBU1005GT0G	KBU1004GT0	KBU1001GT0G
Description	Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN	Bridge Rectifier Diode, 1 Phase, 10A, 800V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN	Bridge Rectifier Diode, 1 Phase, 10A, 600V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN	Bridge Rectifier Diode, 1 Phase, 10A, 400V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBU, 4 PIN	Bridge Rectifier Diode, 1 Phase, 10A, 50V V(RRM), Silicon, GREEN, PLASTIC, KBU, 4 PIN
package instruction	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	100 V	800 V	600 V	400 V	50 V
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4	R-PSFM-W4
Maximum non-repetitive peak forward current	200 A	200 A	200 A	200 A	200 A
Number of components	4	4	4	4	4
Phase	1	1	1	1	1
Number of terminals	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	10 A	10 A	10 A	10 A	10 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	100 V	800 V	600 V	400 V	50 V
surface mount	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Base Number Matches	1	1	1	1	1
Maker	-	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor	-

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