FLASH MEMORY CMOS 32 M (4 M X 8/2 M X 16) BIT Dual Operation
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | SPANSION |
Parts packaging code | BGA |
package instruction | TFBGA, BGA63,8X12,32 |
Contacts | 63 |
Reach Compliance Code | compli |
ECCN code | 3A991.B.1.A |
Maximum access time | 80 ns |
Other features | ALSO CONFIGURABLE AS 4M X 8 |
Spare memory width | 8 |
startup block | TOP |
command user interface | YES |
Universal Flash Interface | YES |
Data polling | YES |
JESD-30 code | R-PBGA-B63 |
JESD-609 code | e0 |
length | 11 mm |
memory density | 33554432 bi |
Memory IC Type | FLASH |
memory width | 16 |
Number of functions | 1 |
Number of departments/size | 8,63 |
Number of terminals | 63 |
word count | 2097152 words |
character code | 2000000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 2MX16 |
Package body material | PLASTIC/EPOXY |
encapsulated code | TFBGA |
Encapsulate equivalent code | BGA63,8X12,32 |
Package shape | RECTANGULAR |
Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 240 |
power supply | 3.3 V |
Programming voltage | 3 V |
Certification status | Not Qualified |
ready/busy | YES |
Maximum seat height | 1.2 mm |
Department size | 8K,64K |
Maximum standby current | 0.000005 A |
Maximum slew rate | 0.053 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 3 V |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | TIN LEAD |
Terminal form | BALL |
Terminal pitch | 0.8 mm |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | 30 |
switch bit | YES |
type | NOR TYPE |
width | 7 mm |