UPA103G-E1 datasheet, PDF - EEWORLD Datasheet

UPA103G-E1: DescriptionRF Small Signal Bipolar Transistor, 0.04A I(C), 5-Element, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size95KB，3 Pages; ManufacturerCalifornia Eastern Labs; Websitehttp://www.cel.com/

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UPA103G-E1 Overview

RF Small Signal Bipolar Transistor, 0.04A I(C), 5-Element, Silicon, NPN

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-CDSO-G14
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.04 A
Collector-based maximum capacity	1.8 pF
Collector-emitter maximum voltage	6 V
Configuration	COMPLEX
Minimum DC current gain (hFE)	40
JESD-30 code	R-CDSO-G14
Number of components	5
Number of terminals	14
Maximum operating temperature	125 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	9000 MHz
Base Number Matches	1

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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