KTC3875
Plastic-Encapsulate Transistors
NPN Silicon
BASE
COLLECTOR
3
1
2
SOT-23
EMITTER
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current -Continuous
Symbol
VCEO
VCBO
VEBO
IC
Value
50
60
5.0
150
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board
(1)
T
A
=25 C
Derate above 25 C
Thermal Resistance, Junction Ambient
Junction and Storage, Temperature
Symbol
PD
R
θJA
T
J, Tstg
Value
150
1.2
833
-55 to +150
Unit
mW
mW/ C
C/W
C
Device Marking
KTC3875=AL
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0)
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0)
Collector Cutoff Current (VCB= 60Vdc , IE=0)
Emitter Cutoff Current (VEB= 5.0 Vdc , I C=0)
1. FR-5=1.0
I
I
0.75
I
I
0.062 in
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
Min
50
60
5.0
-
-
Max
-
-
-
0.1
0.1
Unit
Vdc
Vdc
Vdc
uAdc
uAdc
WEITRON
http://www.weitron.com.tw
KTC3875
ELECTRICAL CHARACTERISTICS
(TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
TYP
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC= 2 mAdc, VCE= 6.0 Vdc)
Collector-Emitter Saturation Voltage
(IC= 100 mAdc, IB= 10 mAdc)
Collector Output Capacitance
(VCB= 10 V, IE= 0, f=1MHz)
Transition Frequency
(IC= 1 mAdc, VCE= 10 Vdc)
Noise Figure
(VCE= 6 V, IC= 0.1mA, Rg=10kΩ , f=1kHz)
hFE
VCE(sat)
Cob
70
-
-
-
700
0.25
3.5
-
Vdc
0.1
2.0
Vdc
fT
80
-
-
MHz
NF
1.0
10
dB
Classification of hFE
Rank
Range
Marking
O
70-140
ALO
Y
120-240
ALY
G
200-400
ALG
BL
350-700
ALL
WEITRON
http://www.weitron.com.tw