|
934058502127 |
PHP27NQ11T |
Description |
Power Field-Effect Transistor |
Power Field-Effect Transistor |
Is it Rohs certified? |
conform to |
conform to |
package instruction |
FLANGE MOUNT, R-PSFM-T3 |
FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code |
not_compliant |
not_compliant |
Avalanche Energy Efficiency Rating (Eas) |
90 mJ |
90 mJ |
Shell connection |
DRAIN |
DRAIN |
Configuration |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage |
110 V |
110 V |
Maximum drain current (ID) |
27.6 A |
27.6 A |
Maximum drain-source on-resistance |
0.05 Ω |
0.05 Ω |
FET technology |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
JESD-30 code |
R-PSFM-T3 |
R-PSFM-T3 |
JESD-609 code |
e3 |
e3 |
Number of components |
1 |
1 |
Number of terminals |
3 |
3 |
Operating mode |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
RECTANGULAR |
RECTANGULAR |
Package form |
FLANGE MOUNT |
FLANGE MOUNT |
Polarity/channel type |
N-CHANNEL |
N-CHANNEL |
Maximum pulsed drain current (IDM) |
112 A |
112 A |
surface mount |
NO |
NO |
Terminal surface |
Tin (Sn) |
Tin (Sn) |
Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
Terminal location |
SINGLE |
SINGLE |
transistor applications |
SWITCHING |
SWITCHING |
Transistor component materials |
SILICON |
SILICON |