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934058502127

Description
Power Field-Effect Transistor
CategoryDiscrete semiconductor    The transistor   
File Size331KB,14 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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934058502127 Overview

Power Field-Effect Transistor

934058502127 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codenot_compliant
Is SamacsysN
Avalanche Energy Efficiency Rating (Eas)90 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage110 V
Maximum drain current (ID)27.6 A
Maximum drain-source on-resistance0.05 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)112 A
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

934058502127 Related Products

934058502127 PHP27NQ11T
Description Power Field-Effect Transistor Power Field-Effect Transistor
Is it Rohs certified? conform to conform to
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant not_compliant
Avalanche Energy Efficiency Rating (Eas) 90 mJ 90 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 110 V 110 V
Maximum drain current (ID) 27.6 A 27.6 A
Maximum drain-source on-resistance 0.05 Ω 0.05 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 112 A 112 A
surface mount NO NO
Terminal surface Tin (Sn) Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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